Research conducted in the department concentrates on developing new characterization methods of MOS and other semiconductor nanostructures and on advanced measurements of semiconductor structures developed in a number of leading scientific centers (among others from USA, Japan, Germany, France, Gt. Britain and Sweden). Theoretical backgrounds (physical models) are worked out for the original methods which we apply to characterize the nanostructures.
Another activity is testing of electron devices reliability and development of new test structures and new measurement procedures which enable failure prediction of devices.
Devices of interest are GaN/AlGaN microwave HEMTS, GaN/AlGaN photodetectors and devices founded on epitaxial structures of superlattice type (QCLs and infrared photodetectors).
Three groups of characterization methods are primarily developed and applied in the department: electrical, photoelectric and optical.
Electrical methods are primarily used to determine C(V), I(V), G(V) characteristics of high resolution and sensitivity, as well as high frequency and admittance spectroscopy methods to determine nanostructures parameters.
Photoelectric methods are primarily employed to determine the energy band parameters of the structures under investigation. Band offsets, contact potential difference, flat-band voltage and trap parameters are determined this way, as well as the distributions of electrical parameters local values over the characteristic areas of nanostructures.
Our optical investigations rely on the methods of spectroscopic ellipsometry, interferometry, reflectometry and Raman spectroscopy. These methods are used, among others, to determine the thickness and optical characteristics of various layered structures, the distribution of mechanical stress and chemical content in various objects.
Our Department permanently employs highly qualified research staff, including an two Associate Professors, Ph.D., D.Sc., two Ph.Ds, two Ph.D. students, plus engineers and technicians.