About us


Rese­arch con­duc­ted in the depart­ment con­cen­tra­tes on deve­lo­ping new cha­rac­te­ri­za­tion methods of MOS and other semi­con­duc­tor nano­struc­tu­res and on advan­ced measu­re­ments of semi­con­duc­tor struc­tu­res deve­lo­ped in a num­ber of leading scien­ti­fic cen­ters (among others from USA, Japan, Ger­many, France, Gt. Bri­tain and Swe­den). The­ore­ti­cal back­gro­unds (phy­si­cal models) are wor­ked out for the ori­gi­nal methods which we apply to cha­rac­te­rize the nano­struc­tu­res.

Ano­ther acti­vity is testing of elec­tron devi­ces relia­bi­lity and deve­lop­ment of new test struc­tu­res and new measu­re­ment pro­ce­du­res which ena­ble failure pre­dic­tion of devi­ces.
Devi­ces of inte­rest are GaN/AlGaN micro­wave HEMTS, GaN/AlGaN pho­to­de­tec­tors and devi­ces foun­ded on epi­ta­xial struc­tu­res of super­lat­tice type (QCLs and infra­red pho­to­de­tec­tors).

Three gro­ups of cha­rac­te­ri­za­tion methods are pri­ma­rily deve­lo­ped and applied in the depart­ment: elec­tri­cal, pho­to­elec­tric and opti­cal.

Elec­tri­cal methods are pri­ma­rily used to deter­mine C(V), I(V), G(V) cha­rac­te­ri­stics of high reso­lu­tion and sen­si­ti­vity, as well as high fre­qu­ency and admit­tance spec­tro­scopy methods to deter­mine nano­struc­tu­res para­me­ters.

Pho­to­elec­tric methods are pri­ma­rily employed to deter­mine the energy band para­me­ters of the struc­tu­res under inve­sti­ga­tion. Band off­sets, con­tact poten­tial dif­fe­rence, flat-band vol­tage and trap para­me­ters are deter­mi­ned this way, as well as the distri­bu­tions of elec­tri­cal para­me­ters local values over the cha­rac­te­ri­stic areas of nano­struc­tu­res.

Our opti­cal inve­sti­ga­tions rely on the methods of spec­tro­sco­pic ellip­so­me­try, inter­fe­ro­me­try, reflec­to­me­try and Raman spec­tro­scopy. These methods are used, among others, to deter­mine the thick­ness and opti­cal cha­rac­te­ri­stics of various lay­ered struc­tu­res, the distri­bu­tion of mecha­ni­cal stress and che­mi­cal con­tent in various objects.

Our Depart­ment per­ma­nen­tly employs highly quali­fied rese­arch staff, inc­lu­ding an two Asso­ciate Pro­fes­sors, Ph.D., D.Sc., two Ph.Ds, two Ph.D. stu­dents, plus engi­ne­ers and tech­ni­cians.