Department of Micro- and Nanotechnology of Wide Bandgap Semiconductors
The research conducted at the Department aims at the implementation of innovative technological solutions used to develop new devices and subassemblies based on wide band gap semiconductors. We are active in the following research areas:
Owing to its outstanding properties GaN is changing the face of high frequency electronics. We are studying the relationships between structural and transport properties of GaN-based HEMT structures, investigating the mechanisms related to ohmic and Schottky contact formation, nanoscale processing, doping by ion implantation, device thermal stability. This knowledge is further developed in the integration of structures into devices, MMIC circuits and systems for high frequency, high power and sensing.
Binary oxide semiconductors, amorphous oxide semiconductors and transparent conducting oxides are used for transparent and flexible electronics, energy harvesting and storage devices, as well as gas and biochemical sensors including lab-on-a-chip autonomous systems for IoT applications. We are exploring bulk, surface, and interface properties of ZnO, In-Ga-Zn-O, SnOx, and (Ru,Ir)-Si-O thin film and nanostructures.
We are a multidisciplinary team with background in electronics, physics, chemistry and materials science, as well as useworld-class purpose-build laboratories enabling state-of-the-art R&D.