Infrastructure

» Deposition of semiconductor, metallic as well as low-k and high-k dielectric thin films

Surrey NanoSystems Gamma1000C sputtering system

  • Fabrication of multicomponent thin-film structures by means of reactive high-vacuum, unbalanced magnetron sputtering
  • Co-sputtering of materials in the mixture of Ar, O2 and N2 plasma
  • 6-in substrates with possible heating up to 1000oC

Oxford Instruments Plasmalab 80 Plus – PECVD system

  • Fabrication of SiO2 and SixNy thin films and SiO2/SixNy multilayers by means of plasma-enhanced chemical vapor deposition
  • Tuning of SixNy chemical composition

Leybold Z-400 sputtering system

  • Reactive sputter-deposition of dielectric and metallic thin films in DC and RF modes in the mixture of Ar, O2 and N2 plasma
  • 2-in substrates

Leybold L-560 PVD system

  • Sputter-deposition of dielectric and metallic thin films in RF mode
  • E-beam deposition (4 crucibles)

Beneq TFS-200-190 Atomic Layer Deposition system

  • Fabrication of SiO2, Al2O3, HfO2, ZrO2, AlN, TaN, Si3N4, ZnO thin films and alloys
  • Thermal- and plasma-enhanced deposition (capacitively-coupled plasma, 300W)
  • 8-in substrates

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» Lithography

Heidelberg Instruments DWL 66FS laser writer

  • Maskless lithography
  • Photomask fabrication
  • Direct writing applications
  • Minimum feature size: 0.6 microns
  • Substrate size: Up to 200 x 200 mm (8 x 8 inches)

Obducat Eitre3 Nano Imprint Lithography system

  • Suitable for R&D within application areas such as solid-state lighting, micro optical and photonic components, patterned media, bio-medical and life science devices, lab-n-chip, MEMS/NEMS and semiconductors
  • Patterning of semiconductor components with minimum feature size down to 20 nm
  • Substrate size: up to 3-in

Süss MicroTec LithographyMJB3 mask aligner

  • Exposure Resolution: >0.6 µm, Alignment Resolution: 0.25um
  • Max. substrate diameter – 3-in
  • Max. substrate thickness – 4.5 mm

Additional equipment for photholithography socket

  • Brewer 100CB and CEE 200CB spin coaters
  • Hot-platesi
  • O2-plasma photoresist removers
  • Optical microscopes embedded with CCD cameras
  • Photomask cleaners

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» Patterning (reactive ion etching/inductively coupled plasma etching)

Oxford Instruments PlasmaLab 100 ICP180

  • Patterning of semiconductors, metals and dielectrics
  • Chlorine ICP and fluorine RIE etching processes
  • ICP: RF source 3 kW, plasma density 5×1011 cm-2, cathode diameter 205 mm, substrate temperature range from LN2 up to 400°C. Reagents (5N purity): BCl3, Cl2, CH4, H2, O2, Ar.
  • RIE: RF source 300 W, plasma density 1-5×109 cm-2, substrate temperature range from 0 up to 70°C. Reagents (5N purity): CF4, CHF3, SF6, CH4, H2, O2, Ar.

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» Thermal processing

Mattson Thermal Products SHS 100 Rapid Thermal Annealing Furnance

  • Rapid Thermal Processing within temperature range from 450°C to 1200°C in neutral or reactive ambient: Ar, N2, O2, N2O (6N purity)
  • Conventional thermal annealing up to 1050°C in Ar and O2 atmosphere.

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The Department’s infra­struc­ture is divi­ded in three parts:

Z03_infratructure

  • A com­plete tech­no­logy line for the fabri­ca­tion of micro­elec­tro­nic devi­ces and sys­tems up to the phase of tech­no­logy demonstrator/prototype set in a clean room of >600 m2 area with class 10, 100, 1000 and 10000 sec­tions. The line is com­po­sed of the fol­lo­wing tech­no­logy nodes:

- depo­si­tion of thin semi­con­duc­ting, metal­lic as well as low k and high k die­lec­tric films (sput­te­ring, e-beam depo­si­tion and ato­mic layer depo­si­tion)

- litho­gra­phy (e-beam litho­gra­phy, pho­to­li­tho­gra­phy, laser litho­gra­phy, nano­im­print litho­gra­phy)

- pat­ter­ning (reac­tive ion etching/inductively coupled pla­sma etching)

- ion implan­ta­tion

- ther­mal pro­ces­sing (rapid ther­mal anne­aling)

The nodes are equ­ip­ped with state-of-the-art equ­ip­ment ena­bling inno­va­tive R&D acti­vi­ties.

  • Inte­ro­pe­ra­tio­nal and post-process cha­rac­te­ri­za­tion of mate­rial and devi­ces for the deter­mi­na­tion of their struc­tu­ral, opti­cal, che­mi­cal and elec­tri­cal pro­per­ties by means of XRD, AFM, SEM, RBS and RBS-channeling spec­tro­me­try, I-V and C-V measu­re­ments, Vol­tam­me­tric measu­re­ments as well as Raman and pho­to­lu­mi­ne­scence spec­tro­scopy.
  • Office and social space.