Infrastructure

» Dry etching (plasma)

Inductively Coupled Plasma: Adixen AMS 100 I-Speeder

Deep Si etching, 4’’ wafers only

Plasma RIE etcher ALCATEL - GIR 260

Plasma RIE of Si3N4, Poly- Si films
Cassette to cassette, single wafer, 100 mm wafers only

Plasma RIE etcher ALCATEL - GIR 260

Plasma RIE of SiO2 and doped glass (PSG, BPSG) films
Cassette to cassette, single wafer, 100 mm wafers only

Plasma RIE etcher PLASMAlab 800 Oxford Plasma Technology

Plasma RIE of Si3N4, Si, Al.
AlSiCu, SiO2, PSG, BSG, BPSG, Poly-Si films
Multiwafer pancake reactor, 51 - 100 mm wafers

Oxford Plasma Technology PRS-801 Barrel resist stripper

Resist stripping 51 - 100 mm wafers

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» Heat treatment (processing)

Diffusion furnace

Tube 10 - special thermal processes, 600-1200°C O2, N2, H2;
Tube 11 - sintering, 400 - 500°C, N2;
Tube 12 - sintering, 400 - 500°C, H2

Diffusion furnace - tubes 7, 8 and 9
T = 600 - 1200°C

Tube 7 - SiC tube for High T annealing, O2, N2, H2, Trans-LC;
Tube 8 - oxidation post-implant drive-in, O2, N2, H2;
Tube 9 - long tube with cooling zone, dry oxidation, O2, N2

Diffusion furnace - tubes 1,2 and 3
T = 600 - 1150°C

Tube 1 - double wall tube for very clean oxidations, O2, N2, Trans-LC;
Tube 2 - oxidation, O2, N2, H2, Trans-LC;
Tube 3 - oxidation, O2, N2, H2, HCl

Diffusion furnace - tubes 4,5 and 6
T = 600 - 1200°C

Tube 4 - densification, boron drive in, O2, N2, H2;
Tube 5 - densification, phosph. drive in, O2, N2, H2;
Tube 6 - POCl3 prediffusion, O2, N2, POCl3
T=920-1050°C, U/I = 0,1-20 Ohm

Wet bench

Immersion wet cleaning

Wet bench

Oxide etching

FSI TITAN spray processor

RCA, CARO, HF Wafer cleaning, 3 and 6 inch wafers

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» Masks

DWL 200

Submicron configuration 4mm: minimal structure size 0,8µm, depth of focus 1,7 µm, maximum substrate size 200x200x5mm, typical exposure time for an inch area 2,3h; overlay accurancy 275nm in both axies

Standard configuration 10mm : minimal structure size 2µm, depth of focus 5 µm, maximum substrate size 200x200x5mm, typical exposure time for an inch area 0,85h; overlay accurancy 440nm in both axies

Fast configuration 4 mm : minimal structure size 8µm, depth of focus 120 µm, maximum substrate size 200x200x5mm, typical exposure time for an inch area 0,55h; overlay accurancy 800nm in both axies

ELECTROMASK - Pattern Generator and image multiplier

Up to 5 inch

Mask comparator LEITZ MVG-7x7

3 inch x 3 inch up to 6 inch x 6 inch

Mask developing unit (japan)

Up to 5 inch

Automatic linewidth measuring sys. with sub-micron accuracy Leitz MPV-CD02

Up to 6 inches accuracy, up to 2 nm

TAMARACK (seria 142) mask copier

3 up to 5 inch (square)

High pressure mask cleaner ULTRATECH (model 605)

4 inch and 5 inch

Laser mask corrector QUANTRONIX (model 810)

3 inch up to 5 inch

Convac ST 146 x2 Spiner

Up to 4 inches

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» PVD

Evaporator Balzers BA510

Au and Au alloys - 0,01 - 0,5µm,
Ag - 0.01 - 0.2µm,
Cr - 0.01 - 0.2µm,
Ti - 0.01 - 0.2µm,
SiO - 0.1 - 0.5µm

Evaporator Balzers BAK 550

Deposition of thin films e.g.:
Al - 0.2 - 2 µm

Magnetron Sputtering reactor Leybold Z650

Deposition of thin films, e.g.:
Al, Al:Si:Cu 0.1 - 2 µm,
Ti - 0.05 - 0.5 µm

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» Photolithography

CANON PLA500FA mask aligner

3 inches up to 4 inches, CD 3 µm

CANON PLA500FA mask aligner

3 inches up to 4 inches, CD 3 µm

CANON (PLA500FA) mask aligner

3 inches up to 4 inches, CD 3 µm

CONVAC (model ST-146) spinner

Up to 6 inches

Eaton 6000

Water high pressure scrubber up to 6 inches

EATON track (resist spin-on coating & developing)

Automatic dual track device for photoresist spin coating, developing and baking on hot/cool plates.
3 inches to 6 inches

EATON track model 6000 (resist spinning) 2 tracks

Automatic dual track device for photoresist spin coating and baking on hot/cool plates.
3 inches to 6 inches

EATON track model 6000 (resist developing) 2 tracks

Automatic dual track device for photoresist developing and baking on hot/cool plates.
3 inches to 6 inches

GCA WS 8500 Wafer Stepper

Wafers 100 mm; CD 0.9 µm

KARL SUSS MJB-55 mask aligner

Up to 4 inches; CD 3 µm

KARL SUSS two-side aligner model MJB 21

Up to 3 inches

MA-56 aut. mask aligner

Up to 4 inches; CD 3 µm

High pressure mask cleaner ULTRATECH (model 605)

4 up to 5 inches (square)

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