» 2022
- P13709: : “Ohmic Contact Formation to GaN by Ge+ Implantation Doping: Implantation Fluence and Encapsulation Layer Studies”, Materials Science in Semiconductor Processing, vol.146, (2022).
» return
» 2021
- P13540: : “Development of Assembly Techniques for Connection of AlGaN/GaN/Si Chips do DBC Substrate”, Circuit World, vol.47, nr.2, (2021).
- P13579: : “The Interplay between Damage- and Chemical-induced Isolation Mechanism in Fe+ Implanted AlGaN/GaN HEMT Structures”, Materials Science in Semiconductor Processing, vol.127, (2021).
- P13583: : “Ohmic Contact Formation to GaN by Si+ Implantation Doping: Retarding Layer, Implantation Fluence, Encapsulation, and Activation Annealing Temperature Studies”, Materials Science in Semiconductor Processing, vol.122, (2021).
» return
» 2019
- P13330: : “Analysis of Defect Structure in GaN Epilayers Doped with Si Ion Implantation by RBS/c”, Nuclear Instruments & Methods in Physics Res. B, vol.450, (2019).
- P13482: : “IGZO MESFET with Enzyme-Modified Schottky Gate Electrode for Glucose Sensing”, Japanese Journal of Applied Physics, vol.58, nr.9, (2019).
» return
» 2018
- P13320: : “Reliability of Cu-Based Interconnections for Power Devices”, (2018).
- P13353: : “Transparent Ru-SiO/In-Ga-Zn-O MESFETs on Flexible Polymer Substrates”, IEEE Transactions on Electron Devices, vol.65, nr.1, (2018).
- P13354: : “Flexible IGZO Schottky Diodes on Paper”, Semiconductor Science and Technology, vol.33, (2018).
- P13386: : “Surface Properties of Nanostructured, Porous ZnO Thin Films Prepared by Direct Current Reactive Magnetron Sputtering”, Materials, vol.11, nr.1, (2018).
- P13392: : “The Influence of an Ultrathin Ni Interface Layer on the Performance of GaN-Based 380 nm UV LED with Sputtered Zn1-xMgxO:Al Transparent p-Type”, Thin Solid Films, vol.649, (2018).
- P13449: : “AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts”, Micromachines, vol.9, nr.11, (2018).
» return
» 2017
- P13216: : “Below-Band-Gap Absorption in Undoped GaAs at Elevated Temperatures”, Optical Materials, vol.64, (2017).
- P13297: : “Technologia wytwarzania terahercowych laserów kaskadowych”, (2017).
- P13341: : “Pięćdziesiąt lat Instytutu Technologii Elektronowej 1966-2016”, lanl.arXiv.org/cond-mat/0306671, (2017).
- P13349: : “Technologia wytwarzania terahercowych laserów kaskadowych”, Przegląd Elektrotechniczny, vol.93, nr.8, (2017).
- P13351: : “Al0.45Ga0.55As/GaAs-Based Single-Mode Distributed-Feedback Quantum-Cascade Lasers with Surface Gratings”, Journal of Nanophotonics, vol.11, nr.2, (2017).
- P13352: : “Al0.45Ga0.55As/GaAs-Based Single-Mode Distributed-Feedback Quantum-Cascade Lasers with Surface Gratings”, (2017).
- P13359: : “Tuning Transparent Supercapacitor Performance by Controlling the Morphology of its ZnO Electrodes ”, Acta Physica Polonica A, vol.131, nr.6, (2017).
- P13360: : “Highly Transparent Supercapacitors Based on ZnO/MnO2 Nanostructures ”, Nanoscale, vol.9, (2017).
- P13361: : “Controlling the Nanoscale Morphology and Structure of the ZnO/MnO2 System for Efficient Transparent Supercapacitors ”, MRS Communications, vol.7, nr.2, (2017).
- P13362: : “Room Temperature Sputter Deposited Catalyst-Free Nanowires with Wurtzite/Zinc Blende Zno Superstructure and Their Application in Electromechanical Nanogenerators on Polymer and Paper Substrates”, Nanotechnology, vol.28, nr.8, (2017).
» return
» 2016
- P12954: : “Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS Structures”, Bulletin of the Polish Academy of Sciences: Technical Sciences, vol.64, nr.3, (2016).
- P13047: : “Optical Examination of High Contrast Grating Fabricated by Focused-Ion Beam Etching”, Optical and Quantum Electronics, vol.48, nr.4, (2016).
- P13080: : “The Effect of Ni:Si Ratio on Microstructural Properties of Ni/Si Ohmic Contacts to SiC”, Applied Surface Science, vol.369, (2016).
- P13126: : “Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability”, Advances in Condensed Matter Physics, vol.2016, (2016).
- P13150: : “Proton Implantation for Isolation of AlGaAs/GaAs Quantum Cascade Lasers”, Semiconductor Science and Technology, vol.31, nr.7, (2016).
- P13178: : “Impact of Strain on Periodic Gain Structures on Vertical External Cavity Surface-Emitting Lasers”, Applied Physics B - Lasers and Optics, vol.122, nr.258, (2016).
- P13194: : “Fabrication and Properties of Amorphous Zinc Oxynitride Thin Films”, Acta Physica Polonica A, vol.129, nr.1, (2016).
- P13195: : “Controlling In-Ga-Zn Thin Films Transport Properties through Density Changes”, Thin Solid Films, vol.608, (2016).
- P13196: : “Amorficzne półprzewodniki tlenkowe dla elektroniki przezroczystej i elastycznej”, Elektronika, vol.LVII, nr.8, (2016).
- P13205: : “Manufacturing Microwave AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates”, (2016).
- P13240: : “Detektory supersieciowe InAs/GaSb - wybrane zagadnienia wytwarzania przyrządów”, Elektronika, vol.LVII, nr.9, (2016).
- P13248: : “MnO2 Ultrathin Films Deposited by Means of Magnetron Sputtering: Relationship between Process Conditions, Structural Properties and Performance in Transparent Supercapacitors”, Superlattices and Microstructures, vol.100, (2016).
- P13249: : “Influence of Absolute Argon and Oxygen Flow Values at a Constant Ratio on the Growth of Zn/ZnO Nanostructures Obtained by DC Reactive Magnetron Sputtering”, Applied Surface Science, vol.389, (2016).
- P13251: : “Technologia cienkich warstw tlenku cynku o kontrolowanych własnościach strukturalnych, transportowych i optycznych”, Elektronika, vol.LVII, nr.8, (2016).
- P13296: : “Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures”, Acta Physica Polonica A, vol.130, nr.5, (2016).
» return
» 2015
- P12860: : “Response of ZnO/GaN Heterostructure to Ion Irradiation”, Acta Physica Polonica A, vol.128, nr.5, (2015).
- P12895: : “Direct Au-Au Bonding Technology for High Performance GaAs/AlGaAs Quantum Cascade Lasers”, Optical and Quantum Electronics, vol.47, nr.4, (2015).
- P12928: : “Nanometer Scale Patterning of GaN Using Nanoimprint Lithography and Inductively Coupled Plasma Etching”, Microelectronic Engineering, vol.133, (2015).
- P12947: : “Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure”, Journal of Display Technology, vol.11, nr.6, (2015).
- P12948: : “Transparent Amorphous Ru-Si-O Schottky Contacts to In-Ga-Zn-O”, Journal of Display Technology, vol.11, nr.6, (2015).
- P12955: : “Ion Implantation for Isolation of AlGaN/GaN HEMTs Using C or Al”, Physica Status Solidi A, vol.212, nr.5, (2015).
- P12957: : “Identification and Reduction of Acoustic-Noise Influence on Focused Ion Beam (FIB)”, Nuclear Instruments & Methods in Physics Res. B, vol.348, (2015).
- P12986: : “Półprzewodnikowe lasery dyskowe - korzyści z inżynierii przerwy zabronionej”, (2015).
- P12996: : “Temperature-Dependent Electrical Characterization of High-Voltage AlGaN/GaN-on-Si HEMTs with Schottky and Ohmic Drain Contacts”, Solid-State Electronics, vol.111, (2015).
- P13000: : “Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET Performance by Reducing Depletion Region Trap Density”, IEEE Electron Device Letters, vol.36, nr.5, (2015).
- P13007: : “Monolithic High-Index Contrast Grating: a Material Independent High-Reflectance VCSEL Mirror”, Optics Express, vol.23, (2015).
- P13009: : “Amorphous Ni-Zr Layer Applied for Microstructure Improvement of Ni-Based Ohmic Contacts to SiC”, Materials Science and Engineering B, vol.199, (2015).
- P13033: : “Materials and Technological Aspects of High-Temperature SiC Device Packages Reliability”, Microelectronics International, vol.32, nr.3, (2015).
- P13034: : “Nanocrystalline Sputter-Deposited ZnMgO:Al Transparent p-Type Electrode in GaN-Based 385 nm UV LED for Significant Emission Enhancement”, Materials Science and Engineering B, vol.200, (2015).
- P13037: : “Processing of AlGaAs/GaAs Quantum-Cascade Structures for Terahertz Laser”, Journal of Nanophotonics, vol.9, nr.1, (2015).
- P13044: : “n-ZnO/p4H-SiC Diode: Structural, Electrical and Photoresponse Characteristics”, Applied Physics Letters, vol.107, (2015).
- P13049: : “Parametry tranzystorów GaN HEMT - wyniki I etapu projektu PolHEMT”, (2015).
- P13064: : “Chlorine-Enhanced Thermal Oxides Growth and Significant Trap Density Reduction at SiO2/SiC Interface by Incorporation of Phosphorus”, Thin Solid Films, vol.591, (2015).
- P13071: : “Superconducting and Ferromagnetic Properties of NbN/NiCu and NbTiN/NiCu Bilayer Nanostructures for Photon Detection”, (2015).
- P13084: : “Konstrukcje tranzystorów HEMT AlGaN/GaN/Si przeznaczonych dla elektroniki mocy”, (2015).
- P13085: : “Konstrukcje tranzystorów HEMT AlGaN/GaN/Si przeznaczonych dla elektroniki mocy”, Elektronika, vol.LVI, nr.10, (2015).
- P13086: : “Wpływ kontaktu drenu na parametry elektryczne wysokonapięciowych tranzystorów HEMT AlGaN/GaN na podłożu krzemowym”, (2015).
- P13091: : “MID-IR Quantum Cascade Lasers for Gas Sensing Applications”, (2015).
- P13092: : “Determining the Causes of Scanning Distortions in SEM and FIB”, Microscopy and Microanalysis, vol.21, nr.Supp, (2015).
- P13110: : “Novel Approach of Top-Down GaN Nanorods Fabrication”, (2015).
» return
» 2014
- P12708: : “Nanocoral ZnO Films Fabricated on Flexible Poly(vinyl Chloride) Using a Carrier Substrate”, Thin Solid Films, vol.550, (2014).
- P12761: : “Mid-IR Quantum Cascade Lasers: Device Technology and Non-Equilibrium Green s Function Modeling of Electro-Optical Characteristics”, Physica Status Solidi B - Basic Solid State Physics, vol.251, nr.6, (2014).
- P12775: : “Photoluminescence of Nanocoral ZnO Films”, Journal of Luminescence, vol.147, (2014).
- P12799: : “High Resistivity Isolation for AlGaN/GaN HEMT Using Al Double-Implantation”, (2014).
- P12810: : “Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition”, Acta Physica Polonica A, vol.125, nr.5, (2014).
- P12816: : “Switchable Double Wavelength Generating Vertical External Cavity Surface-Emitting Laser”, Optics Express, vol.22, nr.6, (2014).
- P12847: : “Thermal Stability of Multilayer Ti2AlN-Based Ohmic Contacts to n-GaN in Ambient Air”, Solid-State Electronics, vol.94, (2014).
- P12848: : “Cienkie warstwy ZnO wytwarzane techniką magnetronowego rozpylania katodowego: mikrostruktura i funkcjonalność”, Elektronika, vol.LV, nr.9, (2014).
- P12866: : “Room Temperature AlInAs/InGaAs/InP Quantum Cascade Lasers”, Photonics Letters of Poland, vol.6, nr.4, (2014).
- P12893: : “Analiza rozkładu przestrzennego promieniowania generowanego przez lasery kaskadowe w paśmie średniej podczerwieni”, (2014).
- P12898: : “Composition Analysis of Epitaxial NbTiN Films for Superconductor Photon Detectors”, (2014).
- P12900: : “In-Ga-ZnO MESFET with Transparent Amorphous Ru-Si-O Schottky Barrier”, Physica Status Solidi - Rapid Research Letters, vol.8, nr.7, (2014).
- P12902: : “Diody Schottky ego i tranzystory MESFET na bazie In-Ga-Zn-O z przezroczystą bramką Ru-Si-O”, Elektronika, vol.LV, nr.9, (2014).
- P12903: : “Diody Schottky ego i tranzystory MESFET na bazie In-Ga-Zn-O z przezroczystą bramką Ru-Si-O”, (2014).
- P12904: : “Processing of AlGaAs/GaAs QC Structures for Terahertz Laser”, (2014).
- P12910: : “Fotoluminescencyjne badania wpływu temperatury na własności emisyjne periodycznych nanostruktur fotonicznych”, Elektronika, vol.LV, nr.11, (2014).
- P12912: : “Analiza rozkładu przestrzennego promieniowania generowanego przez lasery kaskadowe w paśmie średniej podczerwieni”, Elektronika, vol.LV, nr.11, (2014).
- P12931: : “Optymalizacja warstwy izolacyjnej osadzanej metodą PECVD na strukturach laserów kaskadowych”, (2014).
- P12940: : “Modelowanie normalnie wyłączonych tranzystorów MOS-HEMT AlGaN/GaN”, (2014).
- P12941: : “Charakterystyka struktur MOS AlsO3 i Al2O3/SiO2 na podłożach 4H-SiC”, (2014).
- P12942: : “Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs”, International Journal of Electronics and Telecommunications, vol.60, nr.3, (2014).
- P12944: : “ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures”, Metrology and Measurement Systems, vol.XXI, nr.3, (2014).
- P12949: : “Przezroczysty amorficzny półprzewodnik tlenkowy Zn-Ir-Si-O”, Elektronika, vol.LV, nr.9, (2014).
- P12950: : “Przezroczysty amorficzny półprzewodnik tlenkowy Zn-Ir-Si-O”, (2014).
- P12951: : “Symulacje cienkowarstwowych tranzystorów polowych z kanałem z amorficznego In-Ga-Zn-O”, Elektronika, vol.LV, nr.9, (2014).
- P12952: : “Symulacje cienkowarstwowych tranzystorów polowych z kanałem z amorficznego In-Ga-Zn-O”, (2014).
- P12960: : “Cienkie warstwy ZnO wytwarzane techniką magnetronowego rozpylania katodowego: mikrostruktura i funkcjonalność”, (2014).
- P12964: : “Charakterystyki progowe, wzmocnienie i własności optyczne laserów kaskadowych”, Elektronika, vol.LV, nr.11, (2014).
- P12968: : “Materials and Technological Aspects of High-Temperature SiC Package Reliability”, (2014).
» return
» 2013
- P12544: : “Growth and Characterization of (Cd, Mn)Te”, IEEE Transactions on Nuclear Science, vol.60, nr.5, (2013).
- P12563: : “Non-Periodicity of Peak-to-Peak Distances in X-Ray Diffraction Spectrums from Perfect Superlattices”, Journal of Applied Physics, vol.113, (2013).
- P12580: : “VECSEL Emitting at 976nm for Second Harmonic Generation to the Blue”, (2013).
- P12617: : “AFM Nanomoire Technique with Phase Multiplication”, Measurement Science and Technology, vol.24, (2013).
- P12642: : “Structure of Carbonic Layer in Ohmic Contacts: Comparison of Silicon Carbide/Carbon and Carbon/Silicide Interfaces”, ISRN Physical Chemistry, vol.2013, (2013).
- P12658: : “Determination of Carrier Concentration in VECSEL Lasers”, (2013).
- P12659: : “Diody elektroluminescencyjne na bazie GaN z powierzchniowymi kryształami fotonicznymi”, (2013).
- P12660: : “Diody elektroluminescencyjne na bazie GaN z powierzchniowymi kryształami fotonicznymi”, Elektronika, vol.LIV, nr.9, (2013).
- P12662: : “Structural Analysis of Epitaxial NbTiN Films”, (2013).
- P12667: : “Struktury hybrydowe oraz struktury sensorowe na bazie ZnO”, Elektronika, vol.LIV, nr.9, (2013).
- P12668: : “Struktury hybrydowe oraz struktury sensorowe na bazie ZnO”, (2013).
- P12697: : “Enhanced Measurements of Displacements and Strains in Quasiperiodic Nanostructures”, (2013).
- P12707: : “Complementary Characterization of Ti-Si-C Films by X-Ray Diffraction and Absorption”, Radiation Physics and Chemistry, vol.93, (2013).
- P12709: : “Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors”, Acta Physica Polonica A, vol.124, nr.5, (2013).
- P12713: : “In-Ga-Zn-O Amorphous Thin Films for Transparent Electronics”, (2013).
- P12716: : “Synthesis and Properties of Nanocoral ZnO Structures”, (2013).
- P12717: : “Comparative Study on Au and RuSi Metallization for Ohmic Contacts to Pb(Te,S)”, (2013).
- P12737: : “Procesy wytwarzania periodycznych struktur o wymiarach nanometrowych w GaN przy użyciu technik litografii NIL”, Przegląd Elektrotechniczny, vol.89, nr.10, (2013).
- P12738: : “Hybrid Photonics Structures with Grating and Prism Couplers Based on ZnO Waveguides”, Opto-Electronics Review, vol.21, nr.4, (2013).
- P12741: : “Procesy wytwarzania periodycznych struktur o wymiarach nanometrowych w GaN przy użyciu technik litografii NIL”, (2013).
- P12742: : “Modelowanie normalnie wyłączonych tranzystorów HEMT AlGaN/GaN z bramką p-GaN”, Elektronika, vol.LIV, nr.9, (2013).
- P12743: : “Modelowanie normalnie wyłączonych tranzystorów HEMT AlGaN/GaN z bramką p-GaN”, (2013).
- P12745: : “Effect of SiO2 and Al2O3 Buffer Layer on the Properties of HfO2 Gate Dielectric Stacks on 4H-SiC”, (2013).
- P12746: : “Fabrication and Characterization of Thin-Film Transistors with Amorphous In-Ga-Zn-O Layers”, (2013).
- P12748: : “Technologia wytwarzania siatek Bragga do jednomodowych laserów kaskadowych”, (2013).
- P12768: : “Charakteryzacja ultracienkich warstw NbN i Nb(Ti)N”, (2013).
- P12769: : “Structural Changes and Migration of Carbon in Nickel-Based Ohmic Contacts on Silicon Carbide. Application of Visible and Deep-Ultraviolet Raman Spectroscopy”, (2013).
- P12770: : “Analiza struktury epitaksjalnych warstw NbTiN”, (2013).
- P12771: : “In-Ga-Zn-O Amorphous Thin Films for Transparent Electronics”, (2013).
- P12772: : “Wytwarzanie i charakteryzacja tranzystorów TFT z warstwą amorficznego półprzewodnika In-Ga-Zn-O”, (2013).
- P12773: : “Aspects of SiC Diode Assembly using Ag Technology”, (2013).
» return
» 2012
- P12219: : “The Role of Deep Level Traps in Barrier Height of 4H-SiC Schottky Diode”, Materials Science and Engineering B, vol.177, (2012).
- P12340: : “Role of Beryllium Doping in Strain Changes in II-Type InAs/GaSb Superlattice Investigated by High Resolution X-Ray Diffraction Method”, Applied Physics A - Materials Science & Processing, vol.108, nr.2, (2012).
- P12342: : “Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode”, Materials Science Forum, vol.717-720, (2012).
- P12358: : “Fundamentals and Practice of Metal Contacts to Wide Band Gap Semiconductor Devices”, Crystal Research and Technology, vol.47, nr.3, (2012).
- P12392: : “Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors”, Acta Physica Polonica A, vol.120, nr.6-A, (2012).
- P12393: : “High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor”, Acta Physica Polonica A, vol.120, nr.6-A, (2012).
- P12400: : “Surface Photovoltage and Auger Electron Spectromicroscopy Studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC Structures”, Applied Surface Science, vol.258, (2012).
- P12435: : “Kontrolowane trawienia plazmą BCl3/Ar cienkich warstw AlGaN dla technologii tranzystorów HEMT AlGaN/GaN”, (2012).
- P12436: : “Komplementarne zastosowanie metod dyfrakcji i spektroskopii absorpcyjnej promieniowania X do charakteryzacji cienkich warstw Ti-Si-C”, Elektronika, vol.LIII, nr.9, (2012).
- P12438: : “Kontrolowane trawienia plazmą BCl3/Ar cienkich warstw AlGaN dla technologii tranzystorów HEMT AlGaN/GaN”, Elektronika, vol.LIII, nr.9, (2012).
- P12448: : “Nanostemplowanie w zastosowaniu do wytwarzania struktur fotonicznych w GaN”, Elektronika, vol.LIII, nr.9, (2012).
- P12454: : “Zastosowanie funkcji Lamberta do wyznaczania parametrów złącza p-n”, (2012).
- P12463: : “Ag and N Acceptors in ZnO: An ab initio Study of Acceptor Pairing, Doping Efficiency, and the Role of Hydrogen”, Physical Review B, vol.85, (2012).
- P12482: : “Continuous Wavelet Transform for d-Space Distribution Analysis in Nanocrystallic Materials”, (2012).
- P12484: : “Badania strukturalne warstw węglowych w kontaktach omowych - porównanie widm ramanowskich obserwowanych od strony warstwy krzemkowej oraz podłoża z węglika krzemu”, (2012).
- P12485: : “Komplementarne zastosowanie metod dyfrakcji i spektroskopii absorpcyjnej promieniowania X do charakteryzacji cienkich warstw Ti-Si-C”, (2012).
- P12486: : “Nanostemplowanie w zastosowaniu do wytwarzania struktur fotonicznych w GaN”, (2012).
- P12492: : “Superconducting and Structural Properties of Nb(TiN) Films”, (2012).
- P12508: : “Zastosowanie funkcji Lamberta do wyznaczania parametrów złącza p-n”, Elektronika, vol.LIII, nr.9, (2012).
- P12509: : “Badania strukturalne warstw węglowych w kontaktach omowych - porównanie widm ramanowskich obserwowanych od strony warstwy krzemkowej oraz podłoża z węglika krzemu”, Elektronika, vol.LIII, nr.9, (2012).
- P12521: : “Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide”, ISRN Nanomaterials, vol.2012, (2012).
- P12522: : “Effect of the Post-Deposition Annealing on Electrical Characteristics of MIS Structures with HfO2/SiO2 Gate Dielectrics Stacks”, Materials Science and Engineering B, vol.177, (2012).
- P12543: : “Non-Local Fringe Image Filtration: a New Interferometric Data Filtration Paradigm?”, Photonics Letters of Poland, vol.4, nr.2, (2012).
- P12547: : “Silver Micropowders as SiC Die Attach Material for High Temperature Applications”, (2012).
- P12561: : “Technologia wytwarzania laserów półprzewodnikowych”, (2012).
- P12579: : “From Porous to Dense Thin ZnO Films through Reactive DC Sputter Deposition onto Si (100) Substrates”, Physica Status Solidi A, vol.209, nr.12, (2012).
- P12592: : “Fabrication and Properties of Nanocrystalline Zn-Ir-O Thin Films”, Physica Status Solidi C, vol.9, nr.6, (2012).
- P12598: : “Fabrication and Characterization on p-NiO/n-ZnO Heterojunction Towards Transparent Diode”, (2012).
» return
» 2011
- P11822: : “GaAs/AlGaAs Photonic Crystals for VCSEL-Type Semiconductors Lasers”, Opto-Electronics Review, vol.19, nr.11, (2011).
- P11965: : “Electron Eigenstates in Quantum Dots Revealed by Temperature Derivative Capacitance Spectroscopy”, Journal of Nanoscience and Nanotechnology, vol.11, nr.12, (2011).
- P12108: : “Montaż laserów kaskadowych na pasmo średniej podczerwieni”, Elektronika, vol.LII, nr.1, (2011).
- P12110: : “Chapter 13. Development of (l 9.4 mm) GaAs-Based Quantum Cascade Lasers Operating at the Room Temperature”, (2011).
- P12133: : “The Influence of Inhomogeneous Trap Distribution on Results of DLTS Study”, Microelectronics Reliability, vol.51, (2011).
- P12136: : “Hole Emission Mechanism in Ge/Si Quantum Dots”, Physica Status Solidi C, vol.8, (2011).
- P12137: : “Spatial Variation of Hole Eigen Energies in Ge/Si Quantum Wells”, (2011).
- P12141: : “Electronic Properties of Thin HfO2 Films Fabricated by Atomic Layer Deposition on 4H-SiC”, Acta Physica Polonica A, vol.119, nr.5, (2011).
- P12144: : “TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC”, Materials Transactions, vol.52, (2011).
- P12166: : “Ultrathin NbN Films for Superconducting Single-Photon Detectors”, Acta Physica Polonica A, vol.120, nr.1, (2011).
- P12171: : “Zastosowanie złącza metal-półprzewodnik do określania parametrów fizycznych struktur półprzewodnikowych”, lanl.arXiv.org/cond-mat/0306671, (2011).
- P12204: : “Trawienia półprzewodników szerokoprzerwowych GaN i SiC”, (2011).
- P12205: : “Procesy trawienia suchego ICP w plazmie BCl3 cienkich warstw HfO2 wytworzonych techniką reaktywnego rozpylania katodowego”, (2011).
- P12207: : “Electrical and Optical Properties of NiO Films Deposited by Magnetron Sputtering”, Optica Applicata, vol.XLI, nr.2, (2011).
- P12224: : “Wpływ defektów o głębokich poziomach na wysokość bariery w diodzie Schottky ego 4H-SiC”, (2011).
- P12225: : “Identyfikacja procesów emisji nośników w kropkach kwantowych izotermiczną techniką DLTS”, (2011).
- P12248: : “Elektryczne profile w epitaksjalnym GaAs:Si z dużą koncentracją defektów o niejednorodnych rozkładach przestrzennych indukowanych przerwą wzrostu”, Elektronika, vol.LII, nr.5, (2011).
- P12254: : “Pomiary oporności właściwej kontaktów omowych fo n-SiC metodą c-TLM”, (2011).
- P12255: : “Wyznaczanie profilu koncentracji nośników i domieszek w strukturach 2DEG na bazie GaN”, (2011).
- P12267: : “Badania strukturalne warstw węglowych w niklowych kontaktach omowych za pomocą widzialnej i nadfioletowej spektroskopii ramanowskiej”, (2011).
- P12270: : “Influence of Thermal and Gamma Radiation on Electrical Properties of Thin NiO Films Formed by RF Sputtering”, Procedia Engineering, vol.25, (2011).
- P12274: : “Analiza transmisji optycznej półprzewodnikowych warstw NiO osadzanych metodą magnetronowego rozpylania katodowego”, Elektronika, vol.LII, nr.7, (2011).
- P12286: : “Nanosensitive Silicon Microprobes for Mechanical Detection and Measurements”, Materials Sciences and Applications, vol.2, (2011).
- P12291: : “The Role of Deep Level Traps in Barrier Height of 4H-SiC Schottky Diode”, (2011).
- P12316: : “Procesy trawienia suchego ICP w plazmie Bcl3 cienkich warstw HfO2 wytworzonych techniką reaktywnego rozpylania katodowego”, Elektronika, vol.LII, nr.9, (2011).
- P12320: : “Wpływ defektów o głębokich poziomach na wysokość bariery w diodzie Schottky'ego 4H-SiC”, Elektronika, vol.LII, nr.9, (2011).
- P12321: : “Pomiary oporu właściwego kontaktów omowych do n-SiC metodą c-TLM”, Elektronika, vol.LII, nr.9, (2011).
- P12322: : “Wyznaczanie profilu koncentracji nośników i domieszek w strukturach 2DEG na bazie GaN”, Elektronika, vol.LII, nr.9, (2011).
- P12326: : “Badania strukturalne warstw węglowych w niklowych kontaktach omowych za pomocą widzialnej i nadfioletowej spektroskopii ramanowskiej”, Elektronika, vol.LII, nr.9, (2011).
- P12327: : “Trawienia półprzewodników szerokoprzerwowych GaN i SiC”, Elektronika, vol.LII, nr.9, (2011).
- P12328: : “Optymalizacja procesu NIL pod kątem wytwarzania wzorów o wymiarach krytycznych 200 nm na krzemie o orientacji (100)”, Elektronika, vol.LII, nr.9, (2011).
- P12329: : “Optymalizacja procesu NIL pod kątem wytwarzania wzorów o wymiarach krytycznych 200 nm na krzemie o orientacji (100)”, (2011).
- P12333: : “Wyznaczanie faz powstających w trakcie procesów technologicznych nanoszenia warstw Ti-Si-C na szafir”, (2011).
- P12334: : “InTechFun - aspekty finansowe i prawne Projektu, postęp w realizacji specyficznych zadań Programu Operacyjnego Innowacyjna Gospodarka”, (2011).
- P12335: : “Profilowanie składu chemicznego tlenkowych warstw pasywacyjnych metodą spektromikroskopii elektronów Augera”, (2011).
- P12336: : “InTechFun - aspekty finansowe i prawne Projektu, postęp w realizacji specyficznych zadań Programu Operacyjnego Innowacyjna Gospodarka”, Elektronika, vol.LII, nr.9, (2011).
- P12337: : “Innowacyjne technologie wielofunkcyjnych materiałów i struktur dla nanoelektroniki, fotoniki, spintroniki i technik sensorowych - Panorama Projektu PO IG 01.03.01-00-159/08 InTechFun”, Elektronika, vol.LII, nr.9, (2011).
- P12338: : “Profilowanie składu chemicznego tlenkowych warstw pasywacyjnych metodą spektromikroskopii elektronów Augera”, Elektronika, vol.LII, nr.9, (2011).
- P12339: : “Wyznaczanie faz powstających w trakcie procesów technologicznych nanoszenia warstw Ti-Si-C na szafir”, Elektronika, vol.LII, nr.9, (2011).
- P12351: : “Identyfikacja procesów emisji nośników w kropkach kwantowych izotermiczną techniką DLTS”, Elektronika, vol.LII, nr.9, (2011).
- P12352: : “Wytwarzanie i charakteryzacja cienkich warstw tlenku hafnu dla zastosowań w technologii MOSFET w wegliku krzemu”, Elektronika, vol.LII, nr.9, (2011).
- P12353: : “Wytwarzanie i charakteryzacja cienkich warstw tlenku hafnu dla zastosowań w technologii MOSFET w węgliku krzemu”, (2011).
- P12359: : “Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry”, Acta Physica Polonica A, vol.120, nr.6-A, (2011).
- P12383: : “Badania elektronomikroskopowe struktur półprzewodnikowych wytwarzanych w oparciu o SiC i ZnO”, (2011).
- P12396: : “Influence of Capping SiO2 Layer on Stability of NiO Thin Film under Thermal Stress”, (2011).
- P12397: : “TiAl-Based Ohmic Contacts on p-Type SiC”, (2011).
- P12402: : “Bezkontaktowy konduktometr mikroprzepływowy z nowym rodzajem elektrod”, Wiadomości Elektrotechniczne, vol.LXXIX, nr.10, (2011).
- P12495: : “Photonic Structures with Grating Couplers Based on ZnO”, Opto-Electronics Review, vol.19, nr.4, (2011).
» return
» 2010
- P11811: : “Ujawnianie napromieniowania elektronami krzemu otrzymanego metodą Czochralskiego poprzez jego po-radiacyjną obróbkę termiczną”, Przegląd Elektrotechniczny, vol.86, nr.7, (2010).
- P11838: : “Electron Eigen States in Quantum Dots Revealed by Temperature Derivative Capacitance Spectroscopy”, (2010).
- P11858: : “Classification of Energy Levels in Quantum Dot Structures by Means of Depleted Layer Spectroscopy”, Journal of Electronic Materials, vol.39, nr.6, (2010).
- P11873: : “Revealing the Defects in Electron-Irradiated Czochralski Silicon”, Radiation Measurements, vol.45, (2010).
- P11935: : “Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffussion Barriers”, Materials Science Forum, vol.645-648, (2010).
- P11936: : “Fabrication, Processing and Characterization of Thin Film ZnO for Integrated Optical Gas Sensors”, (2010).
- P11967: : “GaAs/AlGaAs (9.4 mm) Quantum Cascade Lasers Operating at 260 K”, Bulletin of the Polish Academy of Sciences: Technical Sciences, vol.58, nr.4, (2010).
- P12043: : “Formation of Ni/Si Based Ohmic Contacts to n-Type 4H-SiC”, Elektronika, vol.LI, nr.9, (2010).
- P12044: : “Formation of Ni/Si Based Ohmic Contacts to n-Type 4H-SiC”, (2010).
- P12045: : “Innowacyjne technologie wielofunkcyjnych materiałów i struktur dla nanoelektroniki, fotoniki, spintroniki i technik sensorowych (InTechFun)”, (2010).
- P12055: : “Wytwarzanie submikrometrowych wzorów techniką nanostemplowania”, Elektronika, vol.LI, nr.9, (2010).
- P12090: : “Achievement and Perspective of GaN Technology for Microwave Applications”, (2010).
- P12093: : “Krzemowa mikropompka gazowa z napędem piezoelektrycznym”, Elektronika, vol.LI, nr.6, (2010).
- P12100: : “Lasery kaskadowe na zakres średniej podczerwieni”, (2010).
- P12105: : “Lasery kaskadowe na zakres średniej podczerwieni”, Elektronika, vol.LI, nr.10, (2010).
- P12106: : “Morfologia powierzchni międzyfazowych w wielowarstwowych strukturach periodycznych AlGaAs/GaAs”, Elektronika, vol.LI, nr.10, (2010).
- P12107: : “Wpływ parametrów zasilania na parametry aplikacyjne laserów kaskadowych na zakres średniej podczerwieni”, Elektronika, vol.LI, nr.10, (2010).
- P12125: : “Multilayer Metal/Metal-Oxide Diffractive Structure for Photonic Temperature Sensing”, Optics Letters, vol.35, nr.23, (2010).
- P12130: : “Technologia kontaktów omowych i montażu dla przyrządów z węglika krzemu”, (2010).
- P12209: : “Structural Investigations of Carbonic Layer at the Interface of Ni-Based Ohmic Contact Deposited on Silicon Carbide Substrate”, (2010).
» return
» 2009
- P11593: : “Schottky Diode Parameters Extraction Using Lambert W Function”, Materials Science and Engineering B, vol.165, (2009).
- P11602: : “Comprehensive Study of InAs/GaAs Quantum Dots by Means of Complementary Methods”, Materials Science and Engineering B, vol.165, (2009).
- P11603: : “Electrical Characterization of 6H-SiC Grown by Physical Vapor Transport Method”, Materials Science and Engineering B, vol.165, (2009).
- P11644: : “Determination of Thermal Conductivity of Thin Layers Used as Transparent Contacts and AR Contaings with Photothermal Method”, Applied Optics, vol.48, (2009).
- P11661: : “Phase Formation in Ti-AL-N MAX-phase Contacts to GaN”, Materials Science Forum, vol.615-617, (2009).
- P11769: : “Oxidation Process of SiC by RTP Technique”, Materials Science Forum, vol.615-617, (2009).
- P11821: : “Trawienie plazmowe cienkich warstw Ti3SiC2”, Elektronika, vol.L, nr.10, (2009).
- P11859: : “Confined Energy States in Quantum Dots Detected by a Resonant Differential Capacitance Method”, Applied Physics Letters, vol.95, (2009).
- P11860: : “Confined Energy States in Quantum Dots Detected by a Resonant Differential Capacitance Method”, Virtual Journal of Nanoscale Science & Technology, vol.20, nr.14, (2009).
- P11884: : “Mikroprzepływowe immunoczujniki z detekcją amperometryczną”, Elektronika, vol.L, nr.12, (2009).
- P11898: : “Planar Optical Waveguides Based on Thin ZnO Layers”, Acta Physica Polonica A, vol.116, nr.3, (2009).
- P11899: : “Warstwy ZnO jako falowody planarne w układach optyki zintegrowanej”, (2009).
- P11907: : “Development of (l~9.4mm) GaAs-Based Quantum Cascade Lasers”, (2009).
- P11923: : “Przyrządy unipolarne i struktury tranzystorowe na potrzeby elektroniki wysokotemperaturowej”, (2009).
- P11925: : “Stability of Gold Bonding and Ti/Au Ohmic Contact Metallization to n-SiC in High Power Devices”, (2009).
- P11927: : “Fabrication of Thin Film Ti-S-C for Reliable Metallization to Power AlInN/GaN HEMTs”, (2009).
- P11928: : “A Study of Dual Acceptor Behaviour in p-ZnO: Ag-N and Sb-N”, (2009).
- P11929: : “Nanoscale Pattern Definition by Edge Oxidation of Silicon under the Si3N4 Mask - PaDEOx”, Acta Physica Polonica A, vol.116, nr.Sup, (2009).
- P11942: : “Kryształy fotoniczne GaAs/AlGaAs dla laserów półprzewodnikowych typu VCSEL”, (2009).
- P11970: : “Theory of Doping Properties of Ag Acceptors in ZnO”, Physical Review B, vol.80, (2009).
» return
» 2008
- P11430: : “Rozwój konstrukcji technologii struktur ISFET z kontaktami od spodu (BSC ISFET) przeznaczonych do monitorowania środowiska wodnego”, (2008).
- P11436: : “Statistical Methods of Determining thr True Values of the QD Dimensions Based on Atomic Force Microscopy”, Journal of Materials Science: Materials in Electronics, vol.19, (2008).
- P11442: : “Comparative Study on Stress in AlGaN/GaN HEMT Structures Grown on 6H-SiC, Si and Composite Substrates of the 6H-SiC/poly-SiC and Si/poly-SiC”, Journal of Physics: Conference Series, vol.100, (2008).
- P11446: : “Influence of Surface Cleaning Effects on Properties of Schottky Diodes on 4H-SiC”, Applied Surface Science, vol.254, (2008).
- P11448: : “ZnO Sensing Structure for NH3 Detection”, European Physical Journal - Special Topics, vol.154, nr.1, (2008).
- P11459: : “Thermal Instability of Electron Traps in InAs/GaAs Quantum Dot Structures”, Journal of Materials Science: Materials in Electronics, vol.19, (2008).
- P11462: : “Electrical Study of InAs/GaAs Quantum Dots with Two Different Environments”, Physica Status Solidi C, vol.5, nr.9, (2008).
- P11463: : “Analiza wymiarów samozorganizowanych kropek kwantowych z InAs/GaAs wykonanych techniką MBE”, Elektronika, nr.2, (2008).
- P11488: : “Photothermal Measurements in Determination of the Thermal Diffusivity of SiC”, European Physical Journal - Special Topics, vol.153, nr.1, (2008).
- P11532: : “Dislocation-related Photoluminescence from Processed Si”, Journal of Materials Science: Materials in Electronics, vol.19, (2008).
- P11543: : “Excess Current Carrier Distribution in the Base Region of the Semiconductor Multi-junction Structure”, Electron Technology - Internet Journal, vol.39, nr.6, (2008).
- P11556: : “Terahertz Detection by Two Dimensional Plasma Field Effect Transistors in Quantizing Magnetic Fields”, Applied Physics Letters, vol.92, (2008).
- P11560: : “Application of ZnO to Passivate the GaN-based Device Structures”, (2008).
- P11615: : “Oscylator pierścieniowy CMOS jako układ detekcji odkształcenia nanoczułych mikrosond krzemowych”, Elektronika, nr.6, (2008).
- P11650: : “Wpływ procesów przygotowania podłoża 4H-SiC na właściwości diod Schottky'ego”, Elektronika, vol.49, nr.9, (2008).
- P11655: : “Ti-Al-N MAX Phase, a Candidate for Ohmic Contacts to n-GaN”, Acta Physica Polonica A, vol.114, nr.5, (2008).
- P11662: : “Surface Passivation of AlGaN/GaN Heterostructures Using ZnO-based Dielectrics and its Application to HEMTs”, (2008).
- P11681: : “Terahertz Detection by Field-effect Transistors in Magnetic Fields: Shallow vs Deep Water Mechanism of Electron Plasma Instability”, Journal of High Speed Electronics, vol.18, nr.4, (2008).
- P11716: : “Terahertz Detection by the Entire Channel of High Electron Mobility Transistors”, Acta Physica Polonica A, vol.114, nr.5, (2008).
- P11764: : “Planar Optical Waveguides for Application in Optoelectronic Gas Sensors”, Acta Physica Polonica A, vol.114, (2008).
» return
» 2007
- P10003: : “Transparent Ohmic Contacts to GaSb/In(Al)GaAsSb Photovoltaic Cells”, Physica Status Solidi A, vol.204, nr.4, (2007).
- P10009: : “Influence of Pressure Annealing on Electrical Properties of Mn Implanted Silicon”, Vacuum, vol.81, nr.10, (2007).
- P10010: : “Study of Defects in Near-Surface Layer Created in Silicon by H2+ or He+ Implantation”, Vacuum, vol.81, nr.9, (2007).
- P10022: : “Study of Bulk Photovoltaic Effect and Photovoltaic Barrier Effect Distributions in Multicrysta Lline Silicon”, Physica Status Solidi C, vol.4, nr.8, (2007).
- P10055: : “Revealing the Radiation - Induced Effects in Silicon by Processing at Enhanced Temperatures - Pressures”, Radiation Measurements, vol.42, nr.4-5, (2007).
- P10070: : “Sulphur Passivation of GaSb, InGaAsSb and AlGaAsSb Surfaces”, Physica Status Solidi C, vol.4, nr.4, (2007).
- P10072: : “Application of Non-linear Theory to Analysis of Benedicks Effect in Semiconductors”, Physica Status Solidi A, vol.204, nr.4, (2007).
- P10356: : “Optical Properties of P-type ZnO and ZnMnO Doped by N and/or As Acceptors”, (2007).
- P10358: : “Towards Efficient P-type Doping ZnO with Group-v Atoms: N Versus As and Sb”, (2007).
- P10510: : “Modelling of Schottky Contacts for Admittance and Impurity Profiling Measurements”, Electron Technology - Internet Journal, vol.39, nr.5, (2007).
- P10545: : “Influence of Environmental Conditions on Pb-free Solder Joints Quality”, (2007).
- P10981: : “Development of Nanostructure in Nitrogen-implanted Silicon Processed at Enhanced Temperature-pressure”, (2007).
- P11441: : “Stress-temperature Dependence in (Al)GaN HEMT Structure Grown on the Composite SiC Substrates”, (2007).
- P11445: : “Photoluminescence Study of p-type ZnO:Sb Prepared by Thermal Oxidation of the Zn-Sb Starting Material”, Physical Review B, vol.76, (2007).
- P11456: : “Thermal Properties of SiC - Results of Photothermal Measurements”, (2007).
- P11460: : “Electron Tunneling from Quantum Dots Characterized by Deep Level Transient Spectroscopy”, Applied Physics Letters, vol.91, (2007).
- P11461: : “Three Dimensional Mapping of Thermal and Tunnelling Electron Emission from InAs/GaAs Quantum Dots”, Applied Physics Letters, vol.91, (2007).
- P11473: : “Evaluation of Stress in AlGaN/GaN HEMT Structures Grown on Composite Substrates of the Type Mono-Si/poly-SiC and Mono-SiC/poly-SiC”, (2007).
- P11559: : “Properties of P-type ZnO Grown by Oxidation of Zn -Group-V Compounds”, (2007).
» return
» 2006
- P10011: : “Electrical Properties of Electron - Irradiated Czi-Si After Processing Under Enhanced Hydrostatic Pressure”, Elektrotechnika i Elektronika, vol.5-6, (2006).
- P10054: : “Stress Dependent Transformation of Interstitial Oxygen in Processed Ge-Doped Cz-Si”, Nuclear Instruments & Methods in Physics Res. B, vol.253, nr.1-2, (2006).
- P10057: : “Stress-Induced Defects in Processed Electron - Irradiated Cz-Si”, Elektrotechnika i Elektronika, vol.5-6, (2006).
- P10121: : “Ta-Si Contacs to N-SiC for High Temperatures Devices”, Materials Science and Engineering B, vol.135, nr.3, (2006).
- P10169: : “P-type ZnO and ZnMnO by Oxidation of Zn(Mn)Te Films”, Physica Status Solidi C, vol.3, nr.4, (2006).
- P10171: : “ZnO-based P-N Junctions with P-type ZnO by ZnTe Oxidation”, (2006).
- P10242: : “Effect of Pressure Annealing on Structure of Si:Mn”, Materials Science in Semiconductor Processing, vol.9, nr.1-3, (2006).
- P10271: : “PbTe-a New Medium for Quantum Ballistic Devices”, Physica E: Low-Dimensional Systems and Nanostructures, vol.34, nr.1-2, (2006).
- P10274: : “Anti-diffusion Barriers for Gold-based Metallization to P-GaN”, (2006).
- P10283: : “Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon”, Nuclear Instruments & Methods in Physics Res. B, nr.253, (2006).
- P10352: : “New Silicon-based Materials for Spintronics Applications - Si:V and Si:Cr”, (2006).
- P10354: : “Optical Characterisations of ZnO, SnO2, and TiO2 thin Films for Butane”, Applied Optics, vol.45, nr.7, (2006).
- P10355: : “Quantum Nanostructures of Paraelectric PbTe”, Physica E: Low-Dimensional Systems and Nanostructures, vol.35, nr.2, (2006).
- P10357: : “Magneto-optical Properties of the Diluted Magnetic Semiconductor P-type ZnMnO”, Solid State Communications, vol.139, (2006).
- P10360: : “Processing Issues for GaN-based Devices Targeting High Temperature Application”, (2006).
- P10530: : “Application of SU8 Polymer in Waveguide Interferometer Ammonia Sensor”, Molecular and Quantum Acoustics. Annual Journal, vol.27, (2006).
- P10532: : “Application of SU8 Polymer in Waveguide Interferometer Ammonia Sensor”, Molecular and Quantum Acoustics. Annual Journal, vol.27, (2006).
» return
» 2005
- P10130: : “Properties of ZrN Films as Substrate Masks in Liquid Phase Epitaxial Lateral Overgrowth of Compound Semiconductors”, Crystal Research and Technology, vol.40, nr.4-5, (2005).
- P10164: : “Transparent P-type ZnO Films Obtained by Oxidation of Sputter-deposited Zn3N2”, Solid State Communications, vol.135, nr.1-2, (2005).
- P10165: : “Transparent P-type ZnO by Oxidation of Zn-based Compound”, AIP Conference Proceedings, vol.772, (2005).
- P10166: : “Subpicosecond and Enhanced Nanosecond PLD to grow ZnO Films in Nitrogen Ambient”, Surface & Coatings Technology, vol.200, (2005).
- P10167: : “Diffractive Optical Elements for Photonic Gas Sensors”, (2005).
- P10168: : “Optical Sensitivity of Thin Films to Hydrocarbons and Ozone”, (2005).
- P10250: : “Pressure-induced Formation of Electrically Active Centers in Irradiated Silicon: Comparison of Electron and Neutron Irradiation”, Vacuum, vol.77, (2005).
- P10259: : “Defect Structure of Czochralski Silicon Co-implanted with Helium and Hydrogen and Treated at High Temperature-pressure”, Semiconductor Physics, Quantum Electronics & Optoelectronics, vol.8, nr.2, (2005).
- P10270: : “Disorder Suppression and Precise Conductance Quantization in Constructions of PbTe Quantum Wells”, Physical Review B, vol.72, (2005).
- P10272: : “In-plane Uniaxial Anisotropy Rotation in (Ga,Mn)As thin Films”, Physical Review B, vol.71, (2005).
- P10314: : “GaN – materiał dla konstrukcji przyrządów pracujących przy wysokich częstotliwościach (HEMT) i w ekstremalnych warunkach ”, Elektronika, nr.2-3, (2005).
- P10393: : “Pressure Stimulated Creation of Oxygen Related Defects in Oxygen Implanted and Neutron Irradiated Silicon”, Vacuum, vol.35, nr.3, (2005).
- P10477: : “Silicon Dioxide and Silicon Nitride as a Passivation and Edge Termination for 4H-SiC Schottky Diodes”, Diamond & Related Materials, vol.14, (2005).
- P10517: : “Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon”, Optica Applicata, vol.35, nr.3, (2005).
- P10565: : “Effect of Heat Treatment at Enhanced Pressure on Electrical and Structural Properties of Silicon Surface Layer Co-implanted with Hydrogen and Helium Ions”, Opto-Electronics Review, vol.13, nr.1, (2005).
- P10566: : “Thermally Stable Transparent Ru-Si-O Schottky Contacts for n-type GaN and AlGaN”, (2005).
- P10567: : “Thermally Stable Ru-Si-O Gate Electrode for AlGaN/GaN HEMT”, Physica Status Solidi C, vol.2, nr.3, (2005).
- P10568: : “P-type Conducting ZnO: Fabrication and Characterization”, Physica Status Solidi C, vol.2, nr.3, (2005).
- P10579: : “Improved Performance of GaSb-Based MIR Photodetectors through Electrochemical Passivation in Sulphur Containing Solutions”, (2005).
- P10583: : “Preparation and Characterization of Hexagonal MnTe and ZnO Layers ”, Physica Status Solidi C, vol.2, nr.3, (2005).
- P10607: : “Warstwy termicznego SiO2 i Si3N4 na węgliku krzemu (4H-SiC) dla przyrządów mocy MS i MIS ”, (2005).
- P10608: : “GaN – materiał dla konstrukcji przyrządów pracujących przy wysokich częstotliwościach (HEMT) i w ekstremalnych warunkach ”, (2005).
» return
» 2004
- P10394: : “C-V and C-T Measurement and Data Analysis System in the Labview Environment”, (2004).
- P10613: : “Electron Transport and Terahertz Radiation Detection in Submicrometer-sized GaAs/AlGaAs Field-effect Transistors with Two-dimensional Electron Gas”, Physics of the Solid State, vol.46, nr.1, (2004).
- P10622: : “Role of Sub-contact Layers in the Optimization of Low-resistivity Contacts to p-type GaN”, Physica Status Solidi C, vol.1, nr.10, (2004).
- P10637: : “Ballistic Transport in PbTe-based Nanostructures”, Physica E: Low-Dimensional Systems and Nanostructures, vol.20, nr.3-4, (2004).
- P10638: : “Unidirectional Transmission of Electrons in a Magnetic Field Gradient”, Physica E: Low-Dimensional Systems and Nanostructures, vol.21, nr.2-4, (2004).
- P10649: : “Quantum Hall Ferromagnetism in II-VI Based Alloys”, Physica Status Solidi B - Basic Solid State Physics, vol.241, nr.3, (2004).
- P10650: : “Quantum Hall Ferromagnet in Magnetically-doped Quantum Wells”, Physica E: Low-Dimensional Systems and Nanostructures, vol.22, nr.1-3, (2004).
- P10651: : “Study of the Defects in Oxygen Implanted Silicon Subjected to Neutron Irradiation and High Pressure Annealing”, Journal of Applied Physics, vol.27, nr.1-3, (2004).
- P10652: : “Electrical Properties of Sponge-like Buried Layers Formed by High Pressure Annealing of Hydrogen and Helium Co-implanted Silicon”, (2004).
- P10653: : “Study of Long-term Stability of Ohmic Contacts to GaN”, Physica Status Solidi C, vol.1, nr.2, (2004).
- P10654: : “P-type in ZnO:N by Codoping with Cr”, (2004).
- P10655: : “ZnO-GaN Tunnel Junction for Transparent Ohmic Contacts to P-GaN”, Journal of Alloys and Compounds, vol.371, nr.1-2, (2004).
- P10657: : “Unusual Properties of C-T Characteristics of Hydrogen Implanted and Annealed Si”, European Physical Journal - Appl. Phys., vol.27, nr.1-3, (2004).
- P10659: : “Influence of Layer Deformation on Thermal Quenching of Exciton Photoluminescence in Short-period GaAs/AlAs Superlattices”, Semiconductor Science and Technology, vol.19, (2004).
- P10664: : “Amorphous Ta-Si-N Diffusion Barriers on GaAs”, Thin Solid Films, vol.459, nr.1-2, (2004).
- P10665: : “Barrier Properties of Ta-Si-N Films in Ag-and Au-containing Metallization”, Vacuum, vol.74, nr.2, (2004).
- P10666: : “The Study of Thermal Stability of Ta-Si Films on the GaAs Substrate”, Physics and Chemistry of Solid State (ukr), vol.5, nr.1, (2004).
- P10667: : “Diffusion Barrier Properties of Reactively Sputtered W-Ti-N Thin Films”, Reviews on Advanced Materials Science, vol.8, nr.1, (2004).
- P10673: : “Magnetotransport Characterization of THz Detectors Based on Plasma Oscillations in Submicron Field-effect Transistors”, Physics of the Solid State, vol.46, nr.1, (2004).
- P10674: : “Magnetotransport Characterization of THz Detectors Based on Plasma Oscillations in Submicron Field-effect Transistors”, Fizika Tverdovo Teła, vol.46, (2004).
- P10691: : “ZnO and ZnO:Mn Crystals Obtained with the Chemical Vapour Transport Method”, Physica Status Solidi C, vol.1, nr.4, (2004).
- P10692: : “The Chemical Vapour Transport Growth of ZnO Single Crystals”, Journal of Alloys and Compounds, vol.371, nr.1-2, (2004).
- P10694: : “Fabrication of GaSb Microlenses by Photo and E-beam Lithography and Dry Etching”, Solid State Phenomena, vol.99-100, (2004).
- P10695: : “LPE Growth and Characterisation of GaInAsSb Quaternary Layers on (100) GaSb Substrates”, Thin Solid Films, vol.459, nr.1-2, (2004).
- P10726: : “Investigation of Indium Tin Oxide (ITO) Films for the VCSEL Laser with Dielectric Bragg Reflectors”, Physica Status Solidi C, vol.1, nr.2, (2004).
- P10756: : “Electron Transport and Terahertz Radiation Detection in Submicrometer-sized GaAs/AlGaAs Field-effect Transistors with Two-dimesional Electron Gas (ros.) ”, Fizika Tverdovo Teła, vol.46, (2004).
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» 2003
- P10771: : “Quantum Hall Ferromagnet in Magnetically-doped Quantum Wells”, Acta Physica Polonica A, vol.104, nr.2, (2003).
- P10774: : “Pressure Induced Formation of the Electrically Active Centers in Electron and Neutron Irradiated Silicon”, (2003).
- P10785: : “A Fully Integrated Distributed Frequency Tripler for Broadband Harmonic Generation”, (2003).
- P10791: : “Epitaxial Lateral Overgrowth of GaSb layers by Liquid Phase Epitaxy”, Journal of Crystal Growth, vol.253, nr.1-4, (2003).
- P10792: : “Application of Tungsten Films for Substrate Masking in Liquid Phase Epitaxy Lateral Overgrowth of GaAs”, Crystal Research and Technology, vol.38, nr.3-5, (2003).
- P10816: : “AgTe/ZrB2/Au Multilayer Metallization for Improved Ohmic Contacts to n-GaSb”, (2003).
- P10820: : “High Quality p-n Junction Fabrication by Ion Implantation using LPCVD Amorphous Silicon Films”, Vacuum, vol.70, nr.2-3, (2003).
- P10822: : “Engineering ZnO/GaN Interfaces for Tunneling Ohmic Contacts to GaN”, (2003).
- P10886: : “Effect of High Temperature-pressure on Silicon Surface Layers in Si:H, He (Si:He) and Si:N”, Physics and Chemistry of Solid State (ukr), vol.4, nr.2, (2003).
- P10887: : “The Microstructure and Electrical Properties of Hydrogenated Czochralski Silicon Treated at High Temperature-pressure”, Journal of Physics: Condensed Matterials, vol.15, (2003).
- P10903: : “Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures”, (2003).
- P10909: : “Liquid Phase Epitaxy of (100) Oriented GaInAsSb with High Indium Concentration in Liquid Phase”, (2003).
- P10917: : “Growth of PbSe Thin Films on Si Substrates by Pulsed Laser Deposition Method”, Journal of Crystal Growth, vol.252, (2003).
- P10955: : “Extended Temperature Range and Data Link Performance of GaN RC-LEDs”, (2003).
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» 2002
- P10821: : “Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells”, Physical Review Letters, vol.89, nr.26, (2002).
- P10982: : “Effects of Spin Polarization on Electron Transport in Modulation-doped Cd/1-x/Mnx/Te/Cd/1-y/Mgy/Te:I Heterostructures ”, Physica E: Low-Dimensional Systems and Nanostructures, vol.1-4, (2002).
- P11001: : “ Subterahertz Detection by High Electron Mobility Transistors at Large Forward Gate Bias ”, (2002).
- P11011: : “ Spin Alignment of Electrons in PbTe/(PbEu)T Nanostructures ”, Physica E: Low-Dimensional Systems and Nanostructures, vol.13, nr.2-4, (2002).
- P11021: : “ Conductance Noise and Irreversibility in Diluted Magnetic Semiconductor ”, (2002).
- P11023: : “ Transparent ZnO-Based Ohmic Contact to p-GaN ”, (2002).
- P11043: : “ Determination of the Optical Properties of GaSb and GaN Surface ”, (2002).
- P11089: : “ Department of Semiconductor Processing for Photonics ”, Prace ITE, nr.8-12, (2002).
- P11090: : “ Elementy optoelektroniczne średniej podczerwieni ze związków półprzewodnikowych na bazie GaSb. ”, (2002).
- P11164: : “ Electrical Properties and Microstructure of Transparent ZnO Contacts to GaN ”, Physica Status Solidi C, nr.1, (2002).
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» 2001
- P11009: : “ Spatial Fluctuations and Localisation Effects in Optical Characteristics of p-doped GaN Films ”, Physica Status Solidi B - Basic Solid State Physics, vol.228, nr.2, (2001).
- P11124: : “ Department of Fundamental Problems of Electronics ”, Prace ITE, nr.8-12, (2001).
- P11215: : “Litografia struktur III-V z użyciem plazmy BCl3 o podwyższonej gęstości.”, Elektronika, nr.8-9, (2001).
- P11217: : “Formation of Ohmic Contacts to MOCVD Grown p-GaN by Controlled Activation of Mg”, Materials Science and Engineering B, vol.82, (2001).
- P11218: : “Study of Zn-related Structural Transformations at Zn/Ni/p-GaAs Interfaces Relative to the Formation of an Ohmic Contact”, Materials Science in Semiconductor Processing, vol.4, (2001).
- P11222: : “Flux Pinning by Anisotropic Arrays of Antidots in Superconducting Thin Films”, Physica C: Superconductivity and Its Applications, vol.341-348, nr.2, (2001).
- P11232: : “Temperature Dependence of Electrical Properties of Gallium-nitride Bulk Single Crystals Doped with Mg and Their Evolution with Annealing”, Journal of Applied Physics, vol.89, nr.12, (2001).
- P11250: : “Ellipsometric Investigations of (100) GaSb Surfaces under Chemical Etching and Sulfide Treatment”, Materials Science in Semiconductor Processing, vol.4, (2001).
- P11251: : “ Obróbka powierzchni (100) GaSb w związkach zawierających siarkę”, Elektronika, nr.8-9, (2001).
- P11252: : “Interband Optical Absorption in Free Standing Layer of Ga0.96In0.04As0.99N0.01”, Applied Physics Letters, vol.76, nr.10, (2001).
- P11254: : “Design and Fabrication of GaSb/InGaAsSb/AlGaAsSb Mid-infrared Photodetectors.”, Opto-Electronics Review, vol.9, nr.2, (2001).
- P11255: : “ Electron Beam Lithography and Reactive Ion Etching of Nanometer Size Features in Niobium Films”, Materials Science and Engineering C, vol.C15, nr.1-2, (2001).
- P11256: : “Wzrost epitaksjalny i właściwości warstw poczwórnych na bazie GaSb”, Elektronika, nr.8-9, (2001).
- P11263: : “Thermo-photo-voltaic Phenomena in an Inhomogeneous Semiconductor”, Materials Science in Semiconductor Processing, vol.4, (2001).
- P11264: : “Non-ideal Schottky Barrier model for Impedance Measurements of Materials Properties”, Materials Science in Semiconductor Processing, vol.4, nr.1-3, (2001).
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» 2000
- P11278: : “ Voltage-controlled Interference of Ballistic Electrons in an Open Quantum Dot”, Physica B, vol.280, (2000).
- P11285: : “Sulfide Treatment of GaSb Surface: Influence on the LPE Growth of GaAsSb/AlGaAsSb Heterostructures.”, Vacuum, vol.57, nr.2, (2000).
- P11286: : “ Application of CCl2F2 - and CCl4 - based Plasmas for RIE of GaSb and Related Materials.”, Vacuum, vol.56, nr.1, (2000).
- P11288: : “ Characterization of Silicon Wafer Bonding by Observation in Transmitted Infrared Radiation from an Extended Source.”, Thin Solid Films, vol.367, (2000).
- P11307: : “ Quantum Hall Effect in the Highly Spin-polarized Electron System”, Physica B, vol.280, nr.1-4, (2000).
- P11308: : “ Temperature and Size Scaling of the QHE Resistance: the Case of Large Spin Splitting”, Physica E: Low-Dimensional Systems and Nanostructures, vol.6, nr.1, (2000).
- P11314: : “ Influence of Intrinsic Stresses on Crystallographic Defects Distribution in Cz-Si Wafers”, Materials Science and Engineering A, vol.288, nr.2, (2000).
- P11317: : “ Formation of Ohmic Contacts to MOCVD Grown p-GaN by Controlled”, Materials Science and Engineering B, vol.56, (2000).
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» 1999
- P11334: : “Quantum Ballistic Transport in Constructions of n-PbTe”, Physical Review B, vol.60, nr.8, (1999).
- P11336: : “Characteristics of Sputter-deposited TiN, ZrB2 and W2B Diffusion Barriers for Advanced Metallizations to GaAs”, Solid-State Electronics, vol.43, nr.6, (1999).
- P11338: : “Application of Simulation Tools for Design of Large Area Silicon Photodetector Technology”, Nukleonika, vol.44, nr.2, (1999).
- P11364: : “Correlation Between Intrinsic Stress Distribution and Crystallographic Defects Density Profile in Czochralski Silicon After CMOS Processing”, Solid State Phenomena, vol.69-70, (1999).
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» 1998
- P11354: : “Influence of Capping on Manganese Diffusion in CdTe/CdMnTe Quantum Well Structures”, Solid State Communications, vol.107, nr.6, (1998).
- P11393: : “Probing Spin Dynamics by Conductance Fluctuations and Noise in Mesoscopic Spin-glass”, Physica B, vol.249-251, nr.1-4, (1998).
- P11394: : “Interfacial Microstructure of Ni/Si-Based Ohmic Contacts to GaN”, Acta Physica Polonica A, vol.94, nr.3, (1998).
- P11409: : “Light Emitting Diode Arrays for Consumer and Medical Applications”, Materials Science and Engineering B, vol.51, nr.1, (1998).
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