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The family of Ion Sensitive Field Effect Transistor(ISFET) microsensors

The family of Ion Sensitive Field Effect Transistor (ISFET) microsensors for pH measurements, analytical and biomedical applications, monitoring of ground water pollution.

Ion Sensitive Field Effect Transistor(ISFET) sensors, developed and fabricated at ITE, were originated from the MOSFET structure, in which instead of a metal gate a bare layer of a modified dielectric gate exists. The standard NMOS or P-well NMOS technology was implemented to form a family of ISFET sensors with different electrodes configuration, performance, and application possibilities.

ISFET sensor properties and performances are mainly applied for pH measurements. They may be also used as a base structure for a Chemical Field Effect Transistor (ChemFET) obtained by deposition on the dielectric gate area a polyHEMA layer followed by siloprene-based ion-sensitive membranes. With these modifications the ChemFETs may be used for monitoring of ground water pollution. Several other applications are possible including biomedical and biochemical areas.

ITE ISFETs Design Conceptions:
  • Front Side Connected (FSC) ISFET,
  • BackSide Connected (BSC) ISFET.
Download an information brochure.

Contact person: Piotr Grabiec, Bohdan Jaroszewicz

Files:

Z02_of3_en.pdf

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