» 2022
- P13621: : “Sensitive Metal-Semiconductor Nanothermocouples Fabricated by FIB to Investigate Laser Beams with Nanometer Spatial Resolution”, Sensors, vol.22, nr.1, (2022).
» wróć
» 2020
- P13559: : “SIMS Accurate Determination of Matrix Composition of Topological Crystalline Insulator Material Pb1 − xSnxSe”, Surface & Interface Analysis, vol.52, nr.3, (2020).
- P13595: : “Surface Photochemical Corrosion as a Mechanism for Fast Degradation of InGaN UV Laser Diodes”, ACS Applied Materials & Interfaces, vol.12, nr.46, (2020).
- P13601: : “Tuning of Reflection Spectrum of a Monolithic High-Contrast Grating by Variation of Its Spatial Dimensions”, Optics Express, vol.28, nr.14, (2020).
» wróć
» 2019
- P13330: : “Analysis of Defect Structure in GaN Epilayers Doped with Si Ion Implantation by RBS/c”, Nuclear Instruments & Methods in Physics Res. B, vol.450, (2019).
- P13395: : “Comparison of Defect Structure in Si and Ge Ion Implanted GaN Epilayers by RBS Channeling”, Nuclear Instruments & Methods in Physics Res. B, vol.444, (2019).
- P13453: : “Coupled-Cavity AlInAs/InGaAs/InP Quantum Cascade Lasers Fabricated by Focused Ion Beam Processing”, JPhys Photonics, vol.1, nr.1, (2019).
- P13458: : “Terahertz Time-Domain Spectroscopy of Graphene Nanoflakes Embedded in Polymer Matrix”, Applied Sciences-Basel, vol.9, nr.931, (2019).
- P13516: : “Diffusion of Mn Gallium Nitride: Experiment and Modelling”, Journal of Alloys and Compounds, vol.771, (2019).
- P13527: : “Damage-Induced Voltage Alteration (DIVA) Contrast in SEM Images of Ion-Irradiated Semiconductors”, Ultramicroscopy, vol.204, (2019).
» wróć
» 2018
- P13307: : “Microstructure Characterization of LTCC Glass-Ceramic Composites with Various Degree of the Introduced Porosity”, Acta Physica Polonica A, vol.134, nr.1, (2018).
- P13337: : “Ultrahigh Sensitivity SIMS Analysis of Oxygen in Silicon”, Surface & Interface Analysis, vol.50, nr.7, (2018).
- P13342: : “Electrical Isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by Deep Hydrogen Implantation”, Materials Science in Semiconductor Processing, vol.74, (2018).
- P13369: : “Elevated-Temperature Luminescence Measurements to Improve Spatial Resolution”, AIP Advances, vol.8, nr.1, (2018).
- P13435: : “Dwusekcyjne lasery kaskadowe na zakres średniej podczerwieni”, (2018).
» wróć
» 2017
- P13124: : “Whisker Growth from Vacuum Evaporated Submicron Sn Thin Films”, Surface & Coatings Technology, vol.311, (2017).
- P13325: : “Detrimental Nonlocality in Luminescence Measurements”, Journal of Applied Physics, vol.122, (2017).
- P13341: : “Pięćdziesiąt lat Instytutu Technologii Elektronowej 1966-2016”, lanl.arXiv.org/cond-mat/0306671, (2017).
- P13364: : “Communication-Direct Imaging of Irradiation Damage in Semiconductors by Low-Energy SEM”, ECS Journal of Solid State Science and Technology, vol.6, nr.7, (2017).
» wróć
» 2016
- P13047: : “Optical Examination of High Contrast Grating Fabricated by Focused-Ion Beam Etching”, Optical and Quantum Electronics, vol.48, nr.4, (2016).
- P13080: : “The Effect of Ni:Si Ratio on Microstructural Properties of Ni/Si Ohmic Contacts to SiC”, Applied Surface Science, vol.369, (2016).
- P13150: : “Proton Implantation for Isolation of AlGaAs/GaAs Quantum Cascade Lasers”, Semiconductor Science and Technology, vol.31, nr.7, (2016).
- P13158: : “Zastosowanie zogniskowanej wiązki jonów do tworzenia, modyfikacji i charakteryzacji struktur elektronicznych i fotonicznych”, Elektronika, vol.LVII, nr.8, (2016).
- P13203: : “Terahertz Spectroscopy of Isolated Graphene Flakes Inside Polymer-Based Nanocomposite Samples”, (2016).
- P13250: : “High Fluence Effects on Silicon Detectors: Damage and Defects Characterization an Overview of The State of the Art of Radiation Resistance Detectors ”, (2016).
» wróć
» 2015
- P12860: : “Response of ZnO/GaN Heterostructure to Ion Irradiation”, Acta Physica Polonica A, vol.128, nr.5, (2015).
- P12889: : “Incorporation of Oxygen in SiC Implanted with Hydrogen”, Nuclear Instruments & Methods in Physics Res. B, vol.365, (2015).
- P12955: : “Ion Implantation for Isolation of AlGaN/GaN HEMTs Using C or Al”, Physica Status Solidi A, vol.212, nr.5, (2015).
- P12957: : “Identification and Reduction of Acoustic-Noise Influence on Focused Ion Beam (FIB)”, Nuclear Instruments & Methods in Physics Res. B, vol.348, (2015).
- P12979: : “Tin Whisker Growth on the Surface of Tin-Rich Lead-Free Alloys”, SMT Surface Mount Technology Magazine, nr.2, (2015).
- P13009: : “Amorphous Ni-Zr Layer Applied for Microstructure Improvement of Ni-Based Ohmic Contacts to SiC”, Materials Science and Engineering B, vol.199, (2015).
- P13028: : “Tuning the Polarity of Charge Transport in InSb Nanowires via Heat Treatment”, Nanotechnology, vol.26, nr.28, (2015).
- P13050: : “Room Temperature, Single Mode Emission from Two-Section Coupled Cavity InGaAs/AlGaAs/GaAs Quantum Cascade Laser”, Journal of Applied Physics, vol.118, (2015).
- P13051: : “Formation of Coupled-Cavities in Quantum Cascade Lasers Using Focused Ion Beam Milling”, Microelectronics Reliability, vol.55, nr.9-10, (2015).
- P13071: : “Superconducting and Ferromagnetic Properties of NbN/NiCu and NbTiN/NiCu Bilayer Nanostructures for Photon Detection”, (2015).
- P13092: : “Determining the Causes of Scanning Distortions in SEM and FIB”, Microscopy and Microanalysis, vol.21, nr.Supp, (2015).
- P13094: : “Optical Properties of Pure and Ce3+ Doped Gadolinium Gallium Garnet Crystals and Epitaxial Layers”, Journal of Luminescence, vol.164, (2015).
» wróć
» 2014
- P12664: : “Recombination Properties of Diode Structures by Study of Thermal Emission Beyond the Fundamental Absorption Band”, (2014).
- P12735: : “Fabrication of Electrochemical Nanolectrode for Sensor Application Using Focused Ion Beam Technology”, Polish Journal of Chemical Technology, vol.16, nr.3, (2014).
- P12749: : “Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS”, (2014).
- P12754: : “Selective Deposition of Gold Nanoparticles on the Top or Inside a Thin Conducting Polymer Film, by Combination of Electroless Deposition and Electrochemical Reduction”, Electrochimica Acta, vol.122, (2014).
- P12796: : “A Method for the Tin Pest Presence Testing in SnCu Solder Alloys”, Soldering and Surface Mount Technology, vol.26, nr.3, (2014).
- P12798: : “Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films”, ECS Journal of Solid State Science and Technology, vol.3, nr.3, (2014).
- P12799: : “High Resistivity Isolation for AlGaN/GaN HEMT Using Al Double-Implantation”, (2014).
- P12804: : “Effect of Secondary Electroluminescence on Cathodoluminescence and other Luminescence Measurements”, Acta Physica Polonica A, vol.125, nr.4, (2014).
- P12818: : “Diffusion and Impurity Segregation in Hydrogen - Implanted Silicon Carbide”, Journal of Applied Physics, vol.115, (2014).
- P12873: : “Changes in TCR of Amorphous Ni-P Resistive Films as a Function of Thermal Stabilization Parameters”, Microelectronics International, vol.31, nr.3, (2014).
- P12945: : “Whisker Growth in Tin Alloys on Glass-Epoxy Laminate”, SMT Surface Mount Technology Magazine, vol.29, nr.7, (2014).
» wróć
» 2013
- P12530: : “Dependence of Tin Whisker Growth on Copper and Oxygen Content on the Surface of Tin-Rich Lead Free Alloys”, Acta Physica Polonica A, vol.123, nr.2, (2013).
- P12532: : “Whisker Growth in Tin Alloys on Glass-Epoxy Laminate Studied by Energy-Dispersive X-Ray Spectroscopy”, Archives of Metallurgy and Materials, vol.58, nr.2, (2013).
- P12643: : “Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC”, ISRN Electronics, vol.2013, (2013).
- P12662: : “Structural Analysis of Epitaxial NbTiN Films”, (2013).
- P12734: : “(Bio)Electrocatalysis at Tin-Doped Indium Oxide Nanoparticle Film Decorated with Gold”, Electrochimica Acta, vol.106, (2013).
- P12770: : “Analiza struktury epitaksjalnych warstw NbTiN”, (2013).
- P12784: : “Optimization of H+ Implantation Parameters for Exfoliation of 4H-SiC Films”, (2013).
- P12785: : “Silicon Sensors for HL-LHC Tracking Detectors”, Nuclear Instruments & Methods in Physics Res. A, vol.732, (2013).
» wróć
» 2012
- P12277: : “Tin Pest and Tin Oxidation on Tin-Rich Lead Free Alloys Investigated by Electron Microscopy Methods”, Solid State Phenomena, vol.186, (2012).
- P12278: : “Influence of Substrate Type on Tin Whisker Growth in Tin-Rich Lead-Free Solder Alloys”, Materials Science and Engineering B, vol.177, (2012).
- P12358: : “Fundamentals and Practice of Metal Contacts to Wide Band Gap Semiconductor Devices”, Crystal Research and Technology, vol.47, nr.3, (2012).
- P12370: : “Study of Silicon Nanoparticles Formation in Silicon Nitride”, Solid State Phenomena, vol.186, (2012).
- P12384: : “Ni-Based Ohmic Contacts to Silicon Carbide Examined by Electron Microscopy”, Solid State Phenomena, vol.186, (2012).
- P12385: : “Defect Detection in Semiconductor Layers with Built-In Electric Field with the Use Cathodoluminescence”, Physica B, vol.407, (2012).
- P12388: : “Study of Oxides Formed in the HfO2/Si Structure for High-k Dielectric Applications”, Solid State Phenomena, vol.186, (2012).
- P12398: : “Cathodoluminescence and Electroluminescence of Semiconductor Structures in SEM”, Solid State Phenomena, vol.186, (2012).
- P12480: : “Estimation of the Recombination Coefficients in Aged InGaN Laser Diodes”, (2012).
- P12516: : “Deep-Ultraviolet Raman Investigation of Silicon Oxide: Thin Film on Silicon Substrate Versus Bulk Material”, Advances in Natural Sciences: Nanoscience and Nanotechnology, vol.3, (2012).
- P12525: : “Performance of a Nitrogen Implanted Large Aperture THz Emitter”, Photonics Letters of Poland, vol.4, nr.1, (2012).
- P12554: : “Effect of Stress on Structural Transformations in GaMnAs”, Journal of Nanoscience and Nanotechnology, vol.12, (2012).
» wróć
» 2011
- P11819: : “Analysis of Tin Whisker Growth on Lead-Free Alloys with Ni Presence under Thermal Shock Stress”, Materials Science and Engineering B, vol.176, (2011).
- P11881: : “Optimization of Parameters for Silicon Planar Source of Modulated Infrared Radiation”, Materials Science and Engineering B, vol.176, (2011).
- P12051: : “Structure of Self-Implanted Silicon Annealed under Enhanced Hydrostatic Pressure”, High Pressure Research, vol.31, nr.1, (2011).
- P12092: : “Hydrogen Gettering Within Processed Oxygen-Implanted Silicon”, (2011).
- P12098: : “TEM Studies of PtSi Low Schottky-Barrier Contacts for Source/Drain in MOS Transistors”, Central European Journal of Physics, vol.9, (2011).
- P12136: : “Hole Emission Mechanism in Ge/Si Quantum Dots”, Physica Status Solidi C, vol.8, (2011).
- P12137: : “Spatial Variation of Hole Eigen Energies in Ge/Si Quantum Wells”, (2011).
- P12138: : “Electron Microscopy Studies of Non-Local Effects Impact on Cathodoluminescence of Semiconductor Laser Structures”, Materials Transactions, vol.52, (2011).
- P12144: : “TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC”, Materials Transactions, vol.52, (2011).
- P12189: : “X-Ray Inspection of LTCC Devices”, (2011).
- P12229: : “Properties of Si:V Annealed under Enhanced Hydrostatic Pressure”, Acta Physica Polonica A, vol.120, nr.1, (2011).
- P12231: : “Badanie półprzewodników wiązką elektronów, fotonów lub jonów - wpływ nielokalnych właściwości materiału na mierzony sygnał”, lanl.arXiv.org/cond-mat/0306671, (2011).
- P12247: : “Influence of Substrate Type on Tin Whisker Growth for Tin-Rich Lead-Free Solder Alloys”, (2011).
- P12258: : “Occurence of Tin Pest on the Surface of Tin-Rich Lead-Free Alloys”, Soldering and Surface Mount Technology, vol.23, nr.3, (2011).
- P12269: : “X-Ray Inspection of LTCC Devices: Theory and Practice”, Journal of Microelectronics and Electronic Packaging, vol.8, (2011).
- P12300: : “Surface Properties of Laser-Etched LTCC Ceramic”, (2011).
- P12382: : “Badania elektronomikroskopowe kontaktów omowych do węglika krzemu wytwarzanych na bazie niklu”, Elektronika, vol.LII, nr.9, (2011).
- P12383: : “Badania elektronomikroskopowe struktur półprzewodnikowych wytwarzanych w oparciu o SiC i ZnO”, (2011).
- P12526: : “Oxygen Diffusion into GaN from Oxygen Implanted GaN or Al2O3”, Physica Status Solidi C, vol.8, nr.5, (2011).
- P12528: : “Silicon Detectors for the sLHC”, Nuclear Instruments & Methods in Physics Res. A, vol.658, (2011).
» wróć
» 2010
- P11684: : “Transmission Electron Microscopy Study of Erbium Silicide Formation from Ti/Er Stack for Schottky Contact Applications”, Journal of Microscopy, vol.237, nr.3, (2010).
- P11703: : “Transmission Electron Microscopy Characterisation of Au/Pt/Ti/Pt/GaAs Ohmic Contacts for High Power GaAs/InGaAs Semiconductor Lasers”, Journal of Microscopy, vol.237, nr.3, (2010).
- P11705: : “Dependence of Cathodoluminescence on Layer Resistance Applied for Measurement of Thin-Layer Sheet Resistance”, Journal of Microscopy, vol.237, nr.3, (2010).
- P11730: : “Depth Measurements of Etch-Pits in GaN with Shape Reconstruction from SEM Images”, Journal of Microscopy, vol.237, nr.3, (2010).
- P11742: : “Identification of Electron Beam Vibration Sources by Separation of Magnetic Distortion from Electric Distortion on Scanning Electron Microscope Imaging”, Journal of Microscopy, vol.237, nr.3, (2010).
- P11772: : “Characterization of Ytterbium Silicide Formed in Ultra High Vacuum”, (2010).
- P11959: : “Accumulation of Hydrogen within Implantation-Damaged Areas in Processes Si:N and Si:O”, Solid State Phenomena, vol.156-158, (2010).
- P11966: : “Temperature-Dependent Release of Deuterium Accumulated in Spongy-Like Layers Buried in Czochralski Silicon”, (2010).
- P12017: : “Analiza występowania wiskerów na powierzchni wysokocynowych stopów lutowniczych poddanych działaniu skrajnych warunków środowiskowych”, (2010).
- P12034: : “Analiza występowania wiskerów na powierzchni wysokocynowych stopów lutowniczych poddanych działaniu skrajnych warunków środowiskowych”, Elektronika, vol.LI, nr.9, (2010).
- P12043: : “Formation of Ni/Si Based Ohmic Contacts to n-Type 4H-SiC”, Elektronika, vol.LI, nr.9, (2010).
- P12044: : “Formation of Ni/Si Based Ohmic Contacts to n-Type 4H-SiC”, (2010).
- P12045: : “Innowacyjne technologie wielofunkcyjnych materiałów i struktur dla nanoelektroniki, fotoniki, spintroniki i technik sensorowych (InTechFun)”, (2010).
- P12054: : “Silicon Dioxide as a Boundary for Oxygen Outdiffusion from CZ-Si”, Defect and Diffusion Forum, vol.297-301, (2010).
- P12087: : “Defects in High Temperature-Pressure Processed Si:N Revealed by Deuterium Plasma Treatment”, Fizika i Tiechnika Wysokich Dawlienij, vol.20, nr.4, (2010).
- P12170: : “Hydrogen Gettering in Annealed Oxygen-Implanted Silicon”, Semiconductor Physics, Quantum Electronics & Optoelectronics, vol.13, nr.2, (2010).
» wróć
» 2009
- P11475: : “Selective Etching of Dislocations in GaN and Quantitative SEM Analysis with Shape-reconstruction Method”, Micron, nr.40, (2009).
- P11484: : “Measurement of Magnetic Field Distorting the Electron Beam Direction in Scanning Electron Microscope”, IEEE Transactions on Instrumentation and Measurement, vol.58, nr.1, (2009).
- P11487: : “Separation of Image-distrotion Sources and Magnetic-field Measurement in Scanning Electron Microscope (SEM)”, Micron, nr.40, (2009).
- P11551: : “Buried Spongy-like Layers Silicon Implanted with He+, Annealed and Treated on D+ Plasma”, Physica Status Solidi C, vol.6, nr.7, (2009).
- P11575: : “Effect of Processing on Microstructure of Si:Mn”, Materials Science and Engineering B, vol.159-160, (2009).
- P11646: : “Effect of Cu Addition on Whiskers Formation on the Surface of Tin-rich Alloys under Thermal Shock Stress”, Applied Surface Science, nr.255, (2009).
- P11676: : “Stress-mediated Redistribution of Mn in Annealed Si:Mn”, Materials Science and Engineering B, vol.159-160, (2009).
- P11678: : “Defects in Czochralski Grown Si-Ge Annealed Under High Hydrostatic Pressure”, Radiation Physics and Chemistry, vol.78, (2009).
- P11706: : “New Approach to Cathodoluminescence Studies in Application to InGaN/GaN Laser Diode Degradation”, Journal of Microscopy, vol.236, nr.2, (2009).
- P11788: : “Analysis of Tin Whisker Growth on Lead-free Alloys Under Thermal Shock Stress”, (2009).
- P11808: : “Optimization of Parameters for Silicon Planar Source of Modulated Infrared Radiation”, (2009).
- P11812: : “Solid Phase Epitaxial Re-Growth of Amorphous Layer in Self-Implanted Silicon Annealed Under Enhanced Hydrostatic Pressure”, (2009).
- P11813: : “Deuterium Accumulation within Nano-Structured Layers in Si:He upon Plasma Treatment”, Physica Status Solidi A, vol.6, nr.12, (2009).
- P11844: : “HRTEM Characterization of Erbium Silicide Formed in Ultra-High Vacuum”, (2009).
- P11880: : “TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs”, Acta Physica Polonica A, vol.116, nr.Sup, (2009).
- P11913: : “Dependence of Nanoelectronic-Structure Defect Detection by Cathodoluminescence on Electron Beam Current”, Acta Physica Polonica A, vol.116, nr.Sup, (2009).
- P11928: : “A Study of Dual Acceptor Behaviour in p-ZnO: Ag-N and Sb-N”, (2009).
- P11976: : “What is New in Nitride Laser Diodes Reliability Studies”, Physica Status Solidi C, vol.6, nr.S2, (2009).
- P12052: : “ZnO Nanostructures by Atomic Layer Deposition Method”, (2009).
» wróć
» 2008
- P11108: : “Properties of Si:Cr Annealed under Enhanced Stress Conditions”, Solid State Phenomena, vol.131-133, (2008).
- P11195: : “Magnetic Properties of Silicon Crystals Implanted with Manganese”, Materials Science-Poland, vol.26, nr.3, (2008).
- P11422: : “Investigation of the Hydrogen Transport Processes in Crystalline Silicon of n-type Conductivity”, Solid State Phenomena, vol.131-133, (2008).
- P11486: : “Impact of Resistance on Cathodoluminescence and its Application for Layer Sheet-resistance Measurements”, Applied Physics Letters, vol.93, (2008).
- P11558: : “Hydrogen Accumulation within Nano-structured Areas in Implanted Silicon”, World Journal of Engineering, vol.5, nr.4, (2008).
- P11616: : “Mn-containing Nanoclusters in Magnetically Ordered Si:Mn and GaMnAs ”, World Journal of Engineering, vol.5, nr.4, (2008).
- P11620: : “Mn-containing Nanoclusters in MagneticallyOrdered Si:Mn and GaMnAs”, (2008).
- P11621: : “Hydrogen Accumulation within Nano-structured Areas in Implanted Silicon”, (2008).
- P11631: : “Fabrication and Properties of GaN-based Lasers”, Journal of Crystal Growth, vol.310, (2008).
- P11642: : “Electron Microscopy of GaAs/AlGaAs Quantum Cascade Laser”, (2008).
- P11672: : “Transmission Electron Microscopy Study of the Platinum Germanide Formation Process in the Ge/Pt/Ge/SiO2/Si Structure”, Materials Science and Engineering B, nr.154-, (2008).
- P11677: : “Pressure-induced Structural Transformations in Si:V (Si:V,Mn)”, Fizika i Tiechnika Wysokich Dawlienij, vol.18, nr.4, (2008).
- P11729: : “Why InGaN Laser-diode Degradation is a Accompanied by the Improvement of its Thermal Stability?”, (2008).
- P11763: : “Effect of Sodium-ion Implantation on the Properties Titanium”, Journal of Materials Science: Materials in Medicine, nr.19, (2008).
» wróć
» 2007
- P10052: : “Pressure Mediated Emission of Hydrogen from Buried Porous Layers in Silicon CO - Implanted with H2+ and He+”, Physica Status Solidi C, vol.4, nr.6, (2007).
- P10088: : “Hydrostatic Pressure Effect on Dislocation Evolution in Self-implanted Si Investigated by Electron Microscopy Methods”, Vacuum, vol.81, (2007).
- P10229: : “Layer or Strip Resistance Measurement by EBIC”, Materials Transactions, vol.48, nr.5, (2007).
- P10362: : “Defect Structure in Self-implanted Silicon Annealed under Enhanced Hydrostatic Pressure-electron Microscopy Study”, Physica Status Solidi C, vol.4, nr.8, (2007).
- P10366: : “Comprehensive Study of Reliability of InGaN Based Laser Diodes”, (2007).
- P10468: : “Thermal Relaxation Times for Nanoparticles Heated by Ultra Short Laser Pulses”, Lasers in Engineering, vol.17, (2007).
- P10546: : “Silicon Based Materials for Application in Spintronics”, Sensor Electronics and Microsystem Technologies, vol.3, (2007).
- P11423: : “Effect of Sodium-ion Implantation on the Properties of the Surface Layers Formed on CoCrMo Alloy (Endocast SL)”, Vacuum, vol.81, nr.10, (2007).
- P11424: : “The Role of Fluorine-containing Ultra-thin Layer in Controlling Boron Thermal Diffusion Into Silicon”, Journal of Telecommunications and Information Technology, nr.3, (2007).
- P11425: : “Growth and Structural Properties of Thick GaN Layers Obtained by Sublimation Sandwich Method”, Journal of Crystal Growth, vol.303, (2007).
- P11426: : “Effect of Calcium-ion Implantation on the Corrosion Resistance and Bioactivity of the Ti6A14V Alloy”, Vacuum, vol.81, (2007).
- P11483: : “Quantitative Measurement of Electromagnetic Distortions in Scanning Electron Microscope (SEM)”, (2007).
» wróć
» 2006
- P10043: : “TEM Study of PtSi Contact Layers for Low Schottky Barrier MOSFETs”, Nuclear Instruments & Methods in Physics Res. B, vol.253, nr.1-2, (2006).
- P10061: : “Pressure - Induced Transformations of Nitrogen Implanted Into Silicon”, Physica Status Solidi A, vol.206, nr.4, (2006).
- P10116: : “In-situ EBIC Measurements of Local-thickness in Semiconductor Devices”, Journal of Microscopy, vol.224, (2006).
- P10170: : “Deep Levels Induced by InAs/GaAs Quantum Dots”, Materials Science and Engineering C, vol.26, nr.5-7, (2006).
- P10171: : “ZnO-based P-N Junctions with P-type ZnO by ZnTe Oxidation”, (2006).
- P10172: : “Electrical Activity of Deep Levels in the Presence of InAs/GaAs Quantum Dots”, Materials Science in Semiconductor Processing, vol.9, nr.1-3, (2006).
- P10230: : “Resistance and Scheet Resistance Measurements Using Electron Beam Induced Current”, Applied Physics Letters, nr.89, (2006).
- P10232: : “TEM Study of Iridium Silicide Contact Layers for Low Schottky Barrier MOSFETs”, Archives of Metallurgy and Materials, vol.51, nr.4, (2006).
- P10242: : “Effect of Pressure Annealing on Structure of Si:Mn”, Materials Science in Semiconductor Processing, vol.9, nr.1-3, (2006).
- P10275: : “Si Diffusion in Epitaxial GaN”, Physica Status Solidi C, vol.3, nr.6, (2006).
- P10276: : “Diffusion on Mn in Gallium Arsenide”, Journal of Alloys and Compounds, nr.423, (2006).
- P10280: : “Radiation Tolerant Semiconductor Sensors for Tracking Detectors”, Nuclear Instruments & Methods in Physics Res. A, nr.565, (2006).
- P10281: : “Radiation-hard Detectors for Very High Luminosity Colliders”, Nuclear Instruments & Methods in Physics Res. A, nr.560, (2006).
- P10288: : “Elimination of SEM-image Periodic Distoritions with Digital Signal Processing Methods”, Journal of Microscopy, vol.224, (2006).
- P10352: : “New Silicon-based Materials for Spintronics Applications - Si:V and Si:Cr”, (2006).
» wróć
» 2005
- P10110: : “Effect of Dual Ion Implantation of Calcium and Phosphorus on the Properties of Titanum”, Biomaterials, vol.26, nr.16, (2005).
- P10117: : “Characterization of Threading Dislocations in Strained-Si/SiGe Heterostructures Using Preferential Two-step Etching and MOS-EBIC”, (2005).
- P10130: : “Properties of ZrN Films as Substrate Masks in Liquid Phase Epitaxial Lateral Overgrowth of Compound Semiconductors”, Crystal Research and Technology, vol.40, nr.4-5, (2005).
- P10164: : “Transparent P-type ZnO Films Obtained by Oxidation of Sputter-deposited Zn3N2”, Solid State Communications, vol.135, nr.1-2, (2005).
- P10165: : “Transparent P-type ZnO by Oxidation of Zn-based Compound”, AIP Conference Proceedings, vol.772, (2005).
- P10228: : “Effect of Pressure on Emission of Hydrogen from Silicon CO-implanted with Hydrogen and Helium”, (2005).
- P10233: : “Struktura krzemu implantowanego azotem i wygrzanego w warunkach podwyższonego ciśnienia hydrostatycznego”, (2005).
- P10245: : “Strain and Defect Engineering in Si/Si3N4/Si by High Temperature-pressure Traetment”, Materials Science and Engineering B, vol.124-125, (2005).
- P10250: : “Pressure-induced Formation of Electrically Active Centers in Irradiated Silicon: Comparison of Electron and Neutron Irradiation”, Vacuum, vol.77, (2005).
- P10343: : “Manufacturing of Pt-electrode by Wet Etching ”, Microelectronic Engineering, vol.82, nr.3-4, (2005).
- P10555: : “Radiation-hard Semiconductor Detectors for SuperLHC”, Nuclear Instruments & Methods in Physics Res. A, vol.541, nr.1-2, (2005).
- P10558: : “Recent Advancements in the Development of Radiation Hard Semiconductor Detectors for S-LHC”, Nuclear Instruments & Methods in Physics Res. A, vol.552, nr.1-2, (2005).
- P10564: : “Diffusion and Activation of Zn Implanted Into InP:S”, Vacuum, vol.78, nr.2-4, (2005).
- P10565: : “Effect of Heat Treatment at Enhanced Pressure on Electrical and Structural Properties of Silicon Surface Layer Co-implanted with Hydrogen and Helium Ions”, Opto-Electronics Review, vol.13, nr.1, (2005).
- P10566: : “Thermally Stable Transparent Ru-Si-O Schottky Contacts for n-type GaN and AlGaN”, (2005).
- P10567: : “Thermally Stable Ru-Si-O Gate Electrode for AlGaN/GaN HEMT”, Physica Status Solidi C, vol.2, nr.3, (2005).
- P10568: : “P-type Conducting ZnO: Fabrication and Characterization”, Physica Status Solidi C, vol.2, nr.3, (2005).
- P10569: : “Effect of Sodium-ion Implantation on the Corrosion Resistance and Bioactivity of Titanum”, Vacuum, vol.78, nr.2-4, (2005).
- P10577: : “Development of Radiation Tolerant Semiconductor Detectors for the Super-LHC”, Nuclear Instruments & Methods in Physics Res. A, vol.546, nr.1-2, (2005).
» wróć
» 2004
- P10349: : “Out-and In-diffusion of Oxygen 16 O in Silicon”, Semiconductor Science and Technology, vol.19, nr.11, (2004).
- P10364: : “Local Electric Fields in Silicided Shallow Junctions”, Journal of the Electrochemical Society, vol.151, nr.9, (2004).
- P10365: : “The Impact of Strained Si/SiGe Heterostructure Dislocation on the Electrical Activity of Perfects”, (2004).
- P10373: : “Chemical and Structural Characterization of Perfects in Strained-Si/SiGe Heterostructure”, (2004).
- P10434: : “Nanostructures Formation by High Temperature-pressure Treatment of Silicon Implanted with Hydrogen/Helium”, Superlattices and Microstructures, vol.36, nr.1-3, (2004).
- P10614: : “Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon”, Solid State Phenomena, vol.95-96, (2004).
- P10653: : “Study of Long-term Stability of Ohmic Contacts to GaN”, Physica Status Solidi C, vol.1, nr.2, (2004).
- P10654: : “P-type in ZnO:N by Codoping with Cr”, (2004).
- P10684: : “Effect of Stress on Accumulation of Hydrogen and Microstructure of Silicon Co-implanted with Hydrogen and Helium”, (2004).
- P10685: : “Effect of External Stress at Annealing on Microstructure of Silicon Co-implanted with Hydrogen and Helium”, Solid State Phenomena, vol.95-96, (2004).
- P10689: : “Microstructure of Czochralski Silicon Co-implanted with Helium and Hydrogen and Treated at High Temperature and Pressure”, Opto-Electronics Review, vol.12, nr.4, (2004).
- P10692: : “The Chemical Vapour Transport Growth of ZnO Single Crystals”, Journal of Alloys and Compounds, vol.371, nr.1-2, (2004).
- P10695: : “LPE Growth and Characterisation of GaInAsSb Quaternary Layers on (100) GaSb Substrates”, Thin Solid Films, vol.459, nr.1-2, (2004).
» wróć
» 2003
- P10774: : “Pressure Induced Formation of the Electrically Active Centers in Electron and Neutron Irradiated Silicon”, (2003).
- P10775: : “Defect-related Diffusion of Hydrogen in Silicon”, Physica B, vol.340-342, (2003).
- P10777: : “Extremely Deep SIMS Profiling: Oxygen in FZ Silicon”, Applied Surface Science, vol.203-204, (2003).
- P10779: : “Influence of the Ca- and P-enriched Oxide Layers Produced on Titanium and the Ti6A14V Alloy by the IBAD Method Upon the Corrosion Resistance of These Materials”, Vacuum, vol.70, nr.2-3, (2003).
- P10789: : “Gated-diode Study of Corner and Peripheral Leakage Current in High-energy Neutron Irradiated Silicon p-n Junctions”, IEEE Transactions on Nuclear Science, vol.50, nr.2, (2003).
- P10790: : “Activation Energy Analysis as a Tool for Extraction and Investigation of p-n Junction Leakage Current Components”, Journal of Applied Physics, vol.94, nr.2, (2003).
- P10818: : “Diffusion and Activation of Si Implanted Into GaAs”, Vacuum, vol.70, nr.2-3, (2003).
- P10820: : “High Quality p-n Junction Fabrication by Ion Implantation using LPCVD Amorphous Silicon Films”, Vacuum, vol.70, nr.2-3, (2003).
- P10822: : “Engineering ZnO/GaN Interfaces for Tunneling Ohmic Contacts to GaN”, (2003).
- P10846: : “Influence of Anodic Oxidation on the Bioactivity and Corrosion Resistance of Phosphorous-ion Implanted Titanium”, Vacuum, vol.70, nr.2-3, (2003).
- P10847: : “Modifying the Properties of Titanium Surface with the Aim of Improving its Bioactivity and Corrosion Resistance”, Journal of Materials Processing Technology, vol.143-144, (2003).
- P10879: : “Porous-like Silicon Prepared from Si:H Annealed at High Argon Pressure”, Physica Status Solidi A, vol.197, nr.1, (2003).
- P10880: : “Effect of High Hydrostatic Pressure During Annealing on Silicon Implanted with Oxygen”, Journal of Materials Science: Materials in Electronics, vol.14, nr.5-7, (2003).
- P10887: : “The Microstructure and Electrical Properties of Hydrogenated Czochralski Silicon Treated at High Temperature-pressure”, Journal of Physics: Condensed Matterials, vol.15, (2003).
- P10888: : “Effect of Stress on Accumulation of Hydrogen and Microstructure of Silicon Ci-implanted with Hydrogen and Heliuim”, (2003).
- P10889: : “Microstructure of Czochralski Silicon Implanted with Deuterium and Annealed under High Pressure”, Physica B, vol.340-342, (2003).
- P10903: : “Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures”, (2003).
- P10909: : “Liquid Phase Epitaxy of (100) Oriented GaInAsSb with High Indium Concentration in Liquid Phase”, (2003).
» wróć
» 2002
- P10999: : “ Impact of Fast-neutron Irradiation on the Silicon p-n Junction Leakage and Role of the Diffusion Reverse Current ”, Nuclear Instruments & Methods in Physics Res. B, vol.186, (2002).
- P11000: : “ The Impact of Platelet Oxygen Precipitates in Silicon on the Junction Leakage Current and the Interstitial Oxygen Loss ”, Journal of Physics: Condensed Matterials, vol.14, (2002).
- P11026: : “ Department of Materials and Semiconductor Structures Research ”, Prace ITE, nr.8-12, (2002).
- P11040: : “ Effect of Phosphorus-ion Implantation on the Corrosion Resistance and Biocompatibility of Titanium ”, Biomaterials, vol.23, nr.16, (2002).
- P11077: : “ Effect of High Hydrostatic Pressure Applied During Annealing on Silicon Implanted with Oxygen (SIMOX-like Structures) ”, (2002).
- P11080: : “ Effect of Annealing at Argon Pressure up to 1.2 GPa on Hydrogen - Plasma Etched and Hydrogen - Implante Single - Crystalline Silicon ”, (2002).
- P11134: : “ X-Ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen ”, Acta Physica Polonica A, vol.102, nr.2, (2002).
- P11164: : “ Electrical Properties and Microstructure of Transparent ZnO Contacts to GaN ”, Physica Status Solidi C, nr.1, (2002).
- P11208: : “P-N Junction Leakage in Neutron-irradiated Diodes Fabricated in Various Silicon Substrates”, Solid State Phenomena, vol.82-84, (2002).
» wróć
» 2001
- P11074: : “ Effect of Stress on Accumulation of Oxygen in Silicon Implanted with Helium and Hydrogen ”, Physica B, vol.308-310, (2001).
- P11207: : “Statistical Analysis of Shallow P-N Junction Leakage Increase Using XTEM Results Probabilities”, Materials Science in Semiconductor Processing, vol.4, (2001).
- P11217: : “Formation of Ohmic Contacts to MOCVD Grown p-GaN by Controlled Activation of Mg”, Materials Science and Engineering B, vol.82, (2001).
- P11218: : “Study of Zn-related Structural Transformations at Zn/Ni/p-GaAs Interfaces Relative to the Formation of an Ohmic Contact”, Materials Science in Semiconductor Processing, vol.4, (2001).
- P11228: : “Effect of Calcium-ion Implantation on the Corrosion Resistance and Biocompatibility of Titanium”, Biomaterials, vol.22, nr.15, (2001).
- P11229: : “The Influence of Calcium and/or Phosphorus Ion Implantation on the Structure and Corrosion Resistance of Titanium”, Vacuum, vol.63, nr.4, (2001).
- P11239: : “Effect of Annealing at Argon Pressure up to 1.2 GPa on Hydrogen-plasma-etched and Hydrogen-implanted Single-crystalline Silicon”, International Journal of Hydrogen Energy, vol.26, nr.5, (2001).
- P11242: : “Structure of Oxygen-implanted Silicon Single Crystals Treated at >1400 K under High Argon Pressure”, Crystal Research and Technology, vol.36, nr.8-10, (2001).
- P11243: : “Hydrostatic Pressure Effect on Redistribution of Oxygen Atoms in Oxygen-implanted Silicon”, Solid State Phenomena, vol.82-84, (2001).
- P11256: : “Wzrost epitaksjalny i właściwości warstw poczwórnych na bazie GaSb”, Elektronika, nr.8-9, (2001).
- P11259: : “Improved Extraction of the Activation Energy of the Leakage Current in Silicon p-n Junction Diodes”, Applied Physics Letters, vol.78, nr.14, (2001).
- P11265: : “Electrical Characterization of Shallow Cobalt-solicited Junctions”, Journal of Materials Science: Materials in Electronics, vol.12, nr.4-6, (2001).
» wróć
» 2000
- P11283: : “ Effect of External Stress on Creation of Buried SiO2 Layer in Silicon Implanted with Oxygen”, Materials Science and Engineering B, vol.73, (2000).
- P11289: : “ Silicon Substrate Effects on the Current-Voltage Characteristics of Advanced p-n Junction Diodes.”, Materials Science and Engineering B, vol.73, (2000).
- P11297: : “ Cation Diffusion in MBE-grown CdTe Layers.”, Thin Solid Films, vol.367, (2000).
- P11299: : “ Statistical Analysis of Shallow P=N Junction Leakage Increase Using XTEM Results Probabilities.”, Materials Science in Semiconductor Processing, vol.4, nr.1-3, (2000).
- P11313: : “Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si”, Physica Status Solidi A, vol.182, nr.1, (2000).
- P11315: : “ Implantation of Silicon Ions Into a Surface Layer of the Ti6A14V Titanium Alloy and its Effect Upon the Corrosion Resistance and Structure of this Layer”, Journal of Materials Science: Materials in Electronics, vol.35, nr.3, (2000).
- P11316: : “ Peripheral Current Analysis of Silicon p-n Junction and Gated Diodes”, Journal of Applied Physics, vol.88, nr.11, (2000).
- P11317: : “ Formation of Ohmic Contacts to MOCVD Grown p-GaN by Controlled”, Materials Science and Engineering B, vol.56, (2000).
» wróć
» 1999
- P11327: : “P-N Junction Diagnostics to Determine Surface and Bulk Generation/ Recombination Properties of Silicon Substrates”, Journal of the Electrochemical Society, vol.146, nr.3, (1999).
- P11328: : “Electrical Quality Assessment of Epitaxial Wafers Based on p-n Junction Diagnostics”, Journal of the Electrochemical Society, vol.146, nr.9, (1999).
- P11329: : “P-N Junction Peripheral Current Analysis using Gated Diode Measurements”, Solid State Phenomena, vol.69-70, (1999).
- P11350: : “Effect of Carbon Ion Implantation on the Structure and Corrosion Resistance of OT-4-0 Titanium Alloy”, Surface & Coatings Technology, vol.114, (1999).
- P11351: : “Effect of Nitrogen-ion Implantation on the Corrosion Resistance of OT-4-0 Titanium Alloy in 0.9% NaCl Environment”, Surface & Coatings Technology, vol.111, nr.1, (1999).
- P11352: : “Effect of Nitrogen, Carbon and Oxygen Ion Implantation on the Structure and Corrosion Resistance of OT-4-0 Titanium Alloy”, Nukleonika, vol.44, nr.2, (1999).
- P11358: : “Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-implanted Silicon”, Solid State Phenomena, vol.69-70, (1999).
» wróć
» 1998
- P11323: : “Effect of Silicon-ion Implantation Upon the Corrosion Properties of Austenitic Stainless Steels”, Journal of Materials Science: Materials in Electronics, vol.33, nr.18, (1998).
- P11377: : “Channels of Cd Diffusion and Stoichiometry in CdTe Grown by Molecular Beam Epitaxy”, Applied Physics Letters, vol.72, nr.2, (1998).
- P11384: : “Optimised Diode Analysis of Electrical Silicon Substrate Properties”, Journal of the Electrochemical Society, vol.145, nr.6, (1998).
- P11385: : “P-N Junction Peripheral Current Analysis Using Gated Diode Measurements”, Applied Physics Letters, vol.72, nr.26, (1998).
- P11386: : “Electrical and Transmission Electron Microscopy Characterization of 4H-SC Homoepitaxial Mesa Diodes”, Materials Science Forum, vol.264-268, (1998).
- P11394: : “Interfacial Microstructure of Ni/Si-Based Ohmic Contacts to GaN”, Acta Physica Polonica A, vol.94, nr.3, (1998).
- P11411: : “Accurate Extraction of the Diffusion Current in Silicon p-n Function Diodes”, Applied Physics Letters, vol.72, nr.9, (1998).
» wróć