» 2021
- P13606: : “High Power 1770 nm Emission of a Membrane External-Cavity Surface-Emitting Laser”, IEEE Journal of Quantum Electronics, vol.57, nr.1, (2021).
» return
» 2020
- P13541: : “On the Study of Dislocation Density in MBE GaSb-Based Structures”, Crystals, vol.10, (2020).
- P13542: : “The Impact of Mesa Etching Method on IR Photodetector Current-Voltage Characteristics”, Materials Science in Semiconductor Processing, vol.118, (2020).
- P13552: : “Membrane External-Cavity Surface-Emitting Lasers Emitting at 1640 nm”, Optics Letters, vol.45, nr.2, (2020).
- P13596: : “Four-Point Probe Resistivity Noise Measurements of GaSb Layers”, Bulletin of the Polish Academy of Sciences: Technical Sciences, vol.68, nr.1, (2020).
- P13600: : “Growth and Characterization of InP-Based 1750 nm Emitting Membrane External-Cavity Surface-Emitting Laser”, Applied Physics B - Lasers and Optics, vol.126, nr.12, (2020).
» return
» 2019
- P13451: : “Atomically Smooth Interfaces of Type-II InAs/GaSb Superlattice on Metamorphic GaSb Buffer Grown in 2D Mode on GaAs Substrate Using MBE”, Current Applied Physics, vol.19, nr.2, (2019).
- P13454: : “Mid-Infrared Quantum Cascade Lasers with Nonuniformly Tapered Waveguides”, Journal of Lightwave Technology, vol.37, nr.10, (2019).
- P13463: : “On the Beam Radiance of Mid-Infrared Quantum Cascade Lasers - a Review”, Opto-Electronics Review, vol.27, nr.2, (2019).
- P13465: : “LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE”, Crystals, vol.9, (2019).
- P13466: : “GaSb Layers with Low Defect Density Deposited on (001) GaAs Substrate in Two-Dimensional Growth Mode Using Molecular Beam Epitaxy”, Current Applied Physics, vol.19, (2019).
- P13510: : “Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers”, Materials, vol.12, nr.10, (2019).
- P13517: : “Technologia MBE struktur fotorezystorów LWIR na bazie SL II”, Przegląd Elektrotechniczny, vol.95, nr.9, (2019).
- P13518: : “Metodyka określania parametrów elektrycznych warstw GaSb osadzonych na przewodzącym podłożu”, Przegląd Elektrotechniczny, vol.95, nr.9, (2019).
- P13532: : “Novel Approach to Passivation of InAs/GaSb Type II Superlattice Photodetectors”, Applied Physics B - Lasers and Optics, vol.125, nr.12, (2019).
- P13539: : “Optimization of Cavity Designs of Tapered AlInAs/InGaAs/InP Quantum Cascade Lasers Emitting at 4.5 μm”, IEEE Journal of Selected Topics in Quantum Electronics, vol.25, nr.6, (2019).
» return
» 2018
- P13346: : “1/f Noise Modeling of InAs/GaSb Superlattice Mid-Wavelength Infrared Detectors”, Optical and Quantum Electronics, vol.50, nr.1, (2018).
- P13372: : “Comprehensive Investigation of the Interfacial Misfit Array Formation in GaSb/GaAs Material System”, Applied Physics A - Materials Science & Processing, vol.124, nr.7, (2018).
- P13405: : “Analiza właściwości laserów kaskadowych pod kątem zastosowań w systemach łączności w otwartej przestrzeni”, Przegląd Elektrotechniczny, vol.94, nr.9, (2018).
- P13406: : “Stan badań nad laserami kaskadowymi na zakres średniej podczerwieni w ITE”, Przegląd Elektrotechniczny, vol.94, nr.8, (2018).
- P13433: : “Kwantowe lasery kaskadowe na zakres średniej podczerwieni”, (2018).
- P13434: : “Optymalizacja grubości warstw InGaAs w falowodach heterostruktur AlInAs/InGaAs/InP kwantowych laserów kaskadowych wykonywanych techniką MBE”, (2018).
- P13460: : “Optimization of Laser Cavity Designs of Tapered Quantum Cascade Lasers Emitting in 4.5 mm Range”, (2018).
- P13462: : “Mid-Infrared Quantum Cascade Lasers”, (2018).
» return
» 2017
- P13180: : “Selective Etching of GaAs over AlAs Etch-Stop Layer in Buffered Citric Acid/H2O2 Solution”, Materials Science in Semiconductor Processing, vol.63, (2017).
- P13202: : “Field Distribution in Waveguide of Mid-Infrared Strain Compensated InAlAs/InGaAs/InP Quantum Cascade Laser - Simulation and Measurement”, Optical and Quantum Electronics, vol.49, nr.2, (2017).
- P13218: : “MBE Growth of Strain-Compensated InGaAs/InAlAs/InP Quantum Cascade Lasers”, Journal of Crystal Growth, vol.466, (2017).
- P13226: : “Influence of Be Doping Placement in InAs/GaSb Superlattice-Based Absorber on the Performance of MWIR Photodiodes”, Semiconductor Science and Technology, vol.32, nr.5, (2017).
- P13257: : “Numerical Simulation of GaAs-Based Mid-Infrared One-Phonon Resonance Quantum Cascade Laser”, Optical and Quantum Electronics, vol.49, nr.1, (2017).
- P13266: : “Highly Efficient Heat Extraction by Double Diamond Heat-Spreaders Applied to a Vertical External Cavity Surface Emitting Laser”, Optical and Quantum Electronics, vol.49, nr.9, (2017).
- P13291: : “A 95-nm-Wide Tunable Two-Mode Vertical External Cavity Surface - Emitting Laser”, IEEE Photonics Technology Letters, vol.29, nr.24, (2017).
- P13297: : “Technologia wytwarzania terahercowych laserów kaskadowych”, (2017).
- P13302: : “Poprawa własności emisyjnych półprzewodnikowych laserów dyskowych poprzez szybkie wygrzewanie (RTA)”, (2017).
- P13341: : “Pięćdziesiąt lat Instytutu Technologii Elektronowej 1966-2016”, lanl.arXiv.org/cond-mat/0306671, (2017).
- P13347: : “Noise and Detectivity of InAs/GaSb T2SL 4.5 μm IR Detectors ”, (2017).
- P13349: : “Technologia wytwarzania terahercowych laserów kaskadowych”, Przegląd Elektrotechniczny, vol.93, nr.8, (2017).
- P13351: : “Al0.45Ga0.55As/GaAs-Based Single-Mode Distributed-Feedback Quantum-Cascade Lasers with Surface Gratings”, Journal of Nanophotonics, vol.11, nr.2, (2017).
- P13352: : “Al0.45Ga0.55As/GaAs-Based Single-Mode Distributed-Feedback Quantum-Cascade Lasers with Surface Gratings”, (2017).
- P13370: : “Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance”, Photonics, vol.4, nr.47, (2017).
- P13378: : “The Analysis of Functional Regions in the Long-Wavelength-Infrared Interband Cascade Photodetector”, (2017).
» return
» 2016
- P13043: : “A Novel Method to Calculate a Near Field of Widely Divergent Laser Beams”, Optical and Quantum Electronics, vol.48, nr.5, (2016).
- P13047: : “Optical Examination of High Contrast Grating Fabricated by Focused-Ion Beam Etching”, Optical and Quantum Electronics, vol.48, nr.4, (2016).
- P13063: : “Dual-Wavelength Vertical External Cavity Surface-Emitting Laser: Strict Growth Control and Scalable Design”, Applied Physics B - Lasers and Optics, vol.122, nr.23, (2016).
- P13067: : “Surface Passivation of (100) GaSb using Self-Assembled Monolayers of Long-Chain Octadecanethiol”, AIP Advances, vol.6, (2016).
- P13069: : “Noise-Current Correlations in InAs/GaSb Type-II Superlattice Midwavelength Infrared Detectors”, IEEE Transactions on Electron Devices, vol.63, nr.12, (2016).
- P13120: : “Optical Properties of Active Regions in Terahertz Quantum Cascade Lasers”, Journal of Infrared, Millimeter, and Terahertz Waves, vol.37, nr.7, (2016).
- P13148: : “Technologia epitaksji z wiązek molekularnych struktur laserów kaskadowych InAlAs/InGaAs/InP na pasmo średniej podczerwieni”, Elektronika, vol.LVII, nr.9, (2016).
- P13150: : “Proton Implantation for Isolation of AlGaAs/GaAs Quantum Cascade Lasers”, Semiconductor Science and Technology, vol.31, nr.7, (2016).
- P13170: : “CCD Thermoreflectance Spectroscopy as a Tool for Thermal Characterization of Quantum Cascade Lasers”, Semiconductor Science and Technology, vol.31, nr.11, (2016).
- P13178: : “Impact of Strain on Periodic Gain Structures on Vertical External Cavity Surface-Emitting Lasers”, Applied Physics B - Lasers and Optics, vol.122, nr.258, (2016).
- P13184: : “Optimization of Broadband Semiconductor Chirped Mirrors with Genetic Algorithm”, Applied Physics B - Lasers and Optics, vol.122, (2016).
- P13189: : “50 lat działalności Instytutu Technologii Elektronowej”, Elektronika, vol.LVII, nr.8, (2016).
- P13215: : “Analiza falowodów ze związków InGaAs, InAlAs i InP dla laserów kaskadowych emitujących w zakresie średniej podczerwieni”, Elektronika, vol.LVII, nr.9, (2016).
- P13230: : “Detektory na bazie supersieci II rodzaju InAs/GaSb dla zakresu promieniowania średniej podczerwieni”, Elektronika, vol.LVII, nr.8, (2016).
- P13237: : “Wykrywalność detektorów średniej podczerwieni wykonanych z supersieci InAs/GaSb”, Elektronika, vol.LVII, nr.9, (2016).
- P13240: : “Detektory supersieciowe InAs/GaSb - wybrane zagadnienia wytwarzania przyrządów”, Elektronika, vol.LVII, nr.9, (2016).
- P13255: : “Analysis of Electronic Transport in a Single-Phonon Resonance mid-IR Quantum Cascade Laser”, (2016).
» return
» 2015
- P12895: : “Direct Au-Au Bonding Technology for High Performance GaAs/AlGaAs Quantum Cascade Lasers”, Optical and Quantum Electronics, vol.47, nr.4, (2015).
- P12907: : “Intra-Pulse Beam Steering in a Midi-Infrared Quantum Cascade Laser”, Optical and Quantum Electronics, vol.47, nr.4, (2015).
- P12929: : “A Study of InGaAs/InAlAs/InP Avalanche Photodiode”, Solid-State Electronics, vol.104, (2015).
- P12986: : “Półprzewodnikowe lasery dyskowe - korzyści z inżynierii przerwy zabronionej”, (2015).
- P12992: : “High-Contrast Grating Reflectors for 980 nm Vertical-Cavity Surface-Emitting Lasers”, (2015).
- P13007: : “Monolithic High-Index Contrast Grating: a Material Independent High-Reflectance VCSEL Mirror”, Optics Express, vol.23, (2015).
- P13023: : “Sumowanie wiązek generowanych przez jednowymiarowe matryce laserów półprzewodnikowych”, Elektronika, vol.LVI, nr.8, (2015).
- P13050: : “Room Temperature, Single Mode Emission from Two-Section Coupled Cavity InGaAs/AlGaAs/GaAs Quantum Cascade Laser”, Journal of Applied Physics, vol.118, (2015).
- P13051: : “Formation of Coupled-Cavities in Quantum Cascade Lasers Using Focused Ion Beam Milling”, Microelectronics Reliability, vol.55, nr.9-10, (2015).
- P13091: : “MID-IR Quantum Cascade Lasers for Gas Sensing Applications”, (2015).
» return
» 2014
- P12712: : “Design and Fabrication of Highly Dispersive Semiconductor Double-Chirped Mirrors”, Applied Physics B - Lasers and Optics, vol.116, nr.1, (2014).
- P12755: : “Tunable Semiconductor Double-Chirped Mirror with High Negative Dispersion”, IEEE Photonics Technology Letters, vol.26, nr.1, (2014).
- P12757: : “Passivation Studies of GaSb-Based Superlattice Structures”, Thin Solid Films, vol.567, (2014).
- P12758: : “Characterisation of (100) GaSb Passivated Surface Using Next Generation 3D Digital Microscopy”, Acta Physica Polonica A, vol.125, nr.4, (2014).
- P12760: : “PeakForce Tapping Technique for Characterization of Thin Organic Passivating Layers”, Acta Physica Polonica A, vol.125, nr.4, (2014).
- P12761: : “Mid-IR Quantum Cascade Lasers: Device Technology and Non-Equilibrium Green s Function Modeling of Electro-Optical Characteristics”, Physica Status Solidi B - Basic Solid State Physics, vol.251, nr.6, (2014).
- P12765: : “Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes”, Detection, vol.2, nr.2, (2014).
- P12767: : “Comprehensive Analysis of New Near-Infrared Avalanche Photodiode Structure”, Journal of Applied Remote Sensing, vol.8, (2014).
- P12802: : “Przestrzenne charakterystyki wiązek promieniowania emitowanego przez lasery półprzewodnikowe”, Elektronika, vol.LV, nr.3, (2014).
- P12816: : “Switchable Double Wavelength Generating Vertical External Cavity Surface-Emitting Laser”, Optics Express, vol.22, nr.6, (2014).
- P12840: : “Measurements of n-InGaAs with MBE Layers: Relevance of Negative Magnetoresistance in the Investigated Samples”, Materials Science in Semiconductor Processing, vol.26, (2014).
- P12859: : “Hall Measurements of n-Indium Arsenide MBE-Deposited Layers: Relevance to Device Processing and Applications”, Materials Science in Semiconductor Processing, vol.18, (2014).
- P12861: : “High-Resolution X-Ray Characterization of MID-IR Al0.45Ga0.55As/GaAs Quantum Cascade Laser Structures”, Thin Solid Films, vol.564, (2014).
- P12866: : “Room Temperature AlInAs/InGaAs/InP Quantum Cascade Lasers”, Photonics Letters of Poland, vol.6, nr.4, (2014).
- P12893: : “Analiza rozkładu przestrzennego promieniowania generowanego przez lasery kaskadowe w paśmie średniej podczerwieni”, (2014).
- P12894: : “Application of Evolutionary Methods to Semiconductor Double-Chirped Mirrors Design”, (2014).
- P12904: : “Processing of AlGaAs/GaAs QC Structures for Terahertz Laser”, (2014).
- P12909: : “Continuously Tunable Yb:KYW Femtosecond Oscillator Based on a Tunable Highly Dispersive Semiconductor Mirror”, Optics Express, vol.22, nr.15, (2014).
- P12910: : “Fotoluminescencyjne badania wpływu temperatury na własności emisyjne periodycznych nanostruktur fotonicznych”, Elektronika, vol.LV, nr.11, (2014).
- P12911: : “Epitaksja struktur laserów kaskadowych”, Elektronika, vol.LV, nr.11, (2014).
- P12912: : “Analiza rozkładu przestrzennego promieniowania generowanego przez lasery kaskadowe w paśmie średniej podczerwieni”, Elektronika, vol.LV, nr.11, (2014).
- P12930: : “The Unique Combined Confocal Raman Imaging and Scanning Electron Microscopy and AFM Study of (100) GaSb Passivated Surface”, Elektronika, vol.LV, nr.11, (2014).
- P12931: : “Optymalizacja warstwy izolacyjnej osadzanej metodą PECVD na strukturach laserów kaskadowych”, (2014).
- P12962: : “Kwantowe lasery kaskadowe - 20 lat historii i stan obecny”, Elektronika, vol.LV, nr.11, (2014).
- P12964: : “Charakterystyki progowe, wzmocnienie i własności optyczne laserów kaskadowych”, Elektronika, vol.LV, nr.11, (2014).
» return
» 2013
- P12534: : “Analysis of the Spatial Distribution of Radiation Emitted by MIR Quantum Cascade Lasers”, (2013).
- P12557: : “Ohmic Contacts for Room-Temperature AlGaAs/GaAs Quantum Cascade Lasers (QCL)”, Optica Applicata, vol.XLIII, nr.1, (2013).
- P12563: : “Non-Periodicity of Peak-to-Peak Distances in X-Ray Diffraction Spectrums from Perfect Superlattices”, Journal of Applied Physics, vol.113, (2013).
- P12580: : “VECSEL Emitting at 976nm for Second Harmonic Generation to the Blue”, (2013).
- P12582: : “Calculation of Beam Divergence of a Quantum Cascade Laser by Effective Index Method”, (2013).
- P12586: : “Influence of Charge Region on the Operation of InGaAs/InAlAs/InP Avalanche Photodiodes”, Optica Applicata, vol.XLIII, nr.1, (2013).
- P12651: : “Passively Mode-Locked, Self-Starting Femtosecond Yb:KYW Laser with a Single Highly Dispersive Semiconductor Double-Chirped Mirror for Dispersion Compensation”, Laser Physics Letters, vol.10, (2013).
- P12658: : “Determination of Carrier Concentration in VECSEL Lasers”, (2013).
- P12683: : “Kwantowe lasery kaskadowe do celów spektroskopii molekularnej - zagadnienia wybrane”, Elektronika, vol.LIV, nr.11, (2013).
- P12715: : “DW VECSEL - Structure Design and MBE Fabrication”, Photonics Letters of Poland, vol.5, nr.3, (2013).
- P12747: : “Modelowanie właściwości optycznych laserów kaskadowych z rozłożonym sprzężeniem zwrotnym”, (2013).
- P12748: : “Technologia wytwarzania siatek Bragga do jednomodowych laserów kaskadowych”, (2013).
» return
» 2012
- P12112: : “Study of Interfaces Chemistry in Type-II GaSb/InAs Superlattice Structures”, Thin Solid Films, vol.522, (2012).
- P12113: : “Study of Interfaces Chemistry in Type II GaSb/InAs Superlattices Structures”, Physics Procedia, vol.32, (2012).
- P12340: : “Role of Beryllium Doping in Strain Changes in II-Type InAs/GaSb Superlattice Investigated by High Resolution X-Ray Diffraction Method”, Applied Physics A - Materials Science & Processing, vol.108, nr.2, (2012).
- P12366: : “Study of Interfaces Chemistry in Type-II GaSb/InAs Superlattice Structures”, Thin Solid Films, vol.522, (2012).
- P12517: : “Granice widma promieniowania laserów półprzewodnikowych - resume po 50 latach rozwoju ich technologii”, Elektronika, vol.LIII, nr.10, (2012).
- P12540: : “Investigation of Thermal Properties of Mid-Infrared AlGaAs/GaAs Quantum Cascade Lasers”, Journal of Applied Physics, vol.112, (2012).
- P12545: : “Electrical and Optical Characterisation of mid-IR GaAs/AlGaAs Quantum Cascade Lasers”, (2012).
- P12546: : “Experimental Analysis of Thermal Properties of AlGaAs/GaAs Quantum Cascade Lasers”, (2012).
- P12550: : “Self-Consistent Simulation of Mid-IR Quantum Cascade Lasers Based on Rate Equation Approach”, (2012).
- P12551: : “THz Time Domain Spectroscopy of Thin Gold and Titanium Layers on GaAs”, Acta Physica Polonica A, vol.122, nr.6, (2012).
- P12558: : “Multi-Step Interrupted-Growth MBE Technology for GaAs/AlGaAs (9.4 mm) Room Temperature Operating Quantum-Cascade Lasers”, Opto-Electronics Review, vol.20, nr.3, (2012).
- P12561: : “Technologia wytwarzania laserów półprzewodnikowych”, (2012).
- P12585: : “High Performance GaAs/AlGaAs Quantum Cascade Lasers: Optimization of Electrical and Thermal Properties”, (2012).
- P12591: : “Modeling of InGaAs/InAlAs/InP Avalanche Photodiodes with Undepleted Absorber”, (2012).
» return
» 2011
- P12062: : “Measurements and Analysis of Antireflection Coatings Reflectivity Related to External Cavity Lasers”, Optics Communications, vol.284, nr.1, (2011).
- P12108: : “Montaż laserów kaskadowych na pasmo średniej podczerwieni”, Elektronika, vol.LII, nr.1, (2011).
- P12110: : “Chapter 13. Development of (l 9.4 mm) GaAs-Based Quantum Cascade Lasers Operating at the Room Temperature”, (2011).
- P12111: : “Calculation of the Cross-Plane Thermal Conductivity of a Quantum Cascade Laser Active Region”, Journal of Physics D: Applied Physics, vol.44, (2011).
- P12174: : “Chapter 9. MBE Growth of Type-II InAs/GaSb Superlattices for MWIR Detection. Editor Nicole A. Mancuso & James P. Isaac”, (2011).
- P12281: : “Mathematical Models of Heat Flow in Edge-Emitting Semiconductor Lasers”, (2011).
- P12283: : “Method of Determination of AlGaAsSb Layer Composition in MBE Processes with Regard to Unintentional As-Incorporation”, Journal of Applied Physics, vol.110, (2011).
- P12284: : “Zastosowanie technologii MOCVD w dziedzinie laserów antymonkowych z heterozłączem I-go rodzaju”, (2011).
- P12285: : “Wyznaczanie maksymalnej temperatury pracy lasera kaskadowego”, (2011).
- P12359: : “Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry”, Acta Physica Polonica A, vol.120, nr.6-A, (2011).
- P12364: : “Goniometryczna metoda pomiaru przestrzennego rozkładu natężenia promieniowania kwantowych laserów kaskadowych”, Elektronika, vol.LII, nr.10, (2011).
- P12371: : “Kwantowe lasery kaskadowe na zakres średniej podczerwieni”, (2011).
- P12373: : “Room Temperature AlGaAs/GaAs Quantum Cascade Lasers”, Photonics Letters of Poland, vol.3, nr.2, (2011).
- P12377: : “Kwantowe lasery kaskadowe na zakres średniej podczerwieni”, Elektronika, vol.LII, nr.10, (2011).
- P12378: : “AlGaAs/GaAs Quantum Cascade Lasers for Gas Detection Systems”, (2011).
- P12379: : “Technologia wytwarzania pokryć wysokoodbiciowych dla laserów kaskadowych na zakres średniej podczerwieni”, (2011).
- P12387: : “Zastosowanie technologii MOCVD w dziedzinie laserów antymonkowych z heterozłączem I-go rodzaju”, Elektronika, vol.LII, nr.10, (2011).
- P12399: : “Blue-Shift of Band Gap Energy and Reduction of Non-Radiative Defect Density Due to Precise Control of InAs-on-GaSb Interface in Type II InAs/GaSb Superlattice”, Journal of Applied Physics, vol.110, (2011).
- P12407: : “Struktury detektora podczerwieni na bazie supersieci II rodzaju ze związków InAs/GaSb”, Elektronika, vol.LII, nr.10, (2011).
- P12408: : “Struktury detektora podczerwieni na bazie supersieci II rodzaju ze związków InAs/GaSb”, (2011).
- P12417: : “Aktualne kierunki rozwoju laserów półprzewodnikowych”, (2011).
- P12429: : “Study of MOCVD Growth of InGaAsSb/AlGaAsSb/GaSb Heterostructures Using Two Different Aluminium Precursors TMAl and DMEAAl”, Opto-Electronics Review, vol.19, nr.2, (2011).
- P12453: : “Chapter 3. MBE Growth of Type-II InAs/GaSb Superlattices for MWIR Detection. Ed. A. Reimer”, (2011).
» return
» 2010
- P11893: : “A New Method for Solving Nonlinear Carrier Diffusion Equation in Axial Direction of Broad-Area Lasers”, International Journal of Numerical Modelling: Electronic Networks, Devices and F, vol.23, (2010).
- P11967: : “GaAs/AlGaAs (9.4 mm) Quantum Cascade Lasers Operating at 260 K”, Bulletin of the Polish Academy of Sciences: Technical Sciences, vol.58, nr.4, (2010).
- P12039: : “Biało świecące diody LED rewolucjonizują technikę oświetleniową”, Elektronika, vol.LI, nr.9, (2010).
- P12058: : “Problemy epitaksji antymonków grupy III-V”, Elektronika, vol.LI, nr.10, (2010).
- P12093: : “Krzemowa mikropompka gazowa z napędem piezoelektrycznym”, Elektronika, vol.LI, nr.6, (2010).
- P12099: : “Ograniczenie strat w laserach kaskadowych na zakres średniej podczerwieni”, (2010).
- P12100: : “Lasery kaskadowe na zakres średniej podczerwieni”, (2010).
- P12105: : “Lasery kaskadowe na zakres średniej podczerwieni”, Elektronika, vol.LI, nr.10, (2010).
- P12106: : “Morfologia powierzchni międzyfazowych w wielowarstwowych strukturach periodycznych AlGaAs/GaAs”, Elektronika, vol.LI, nr.10, (2010).
- P12107: : “Wpływ parametrów zasilania na parametry aplikacyjne laserów kaskadowych na zakres średniej podczerwieni”, Elektronika, vol.LI, nr.10, (2010).
- P12120: : “Detektory podczerwieni na bazie supersieci II rodzaju ze związków InAs/GaInSb”, Elektronika, vol.LI, nr.10, (2010).
» return
» 2009
- P11679: : “O algorytmach badania własności relacji”, Zeszyty Naukowe Warszawskiej Wyższej Szkoły Informatyki, vol.3, nr.3, (2009).
- P11680: : “Wprowadzenie w rozwiązywanie konkursowych zadań programistycznych”, Zeszyty Naukowe Warszawskiej Wyższej Szkoły Informatyki, vol.3, nr.3, (2009).
- P11697: : “Molecular-beam Epitaxy Growth and Characterization of Mid-infrared Quantum Cascade Laser Structures”, Microelectronics Journal, vol.40, nr.3, (2009).
- P11699: : “Photoluminescence Studies of Optical Properties of VECSEL Active Region under High Excitation Conditions”, Journal of Physics: Conference Series, vol.146, (2009).
- P11724: : “Double-frequency External Cavity Laser with a Singular Optical Semiconductor Amplifier”, Opto-Electronics Review, vol.17, nr.3, (2009).
- P11780: : “Pomiar współczynnika odbicia zwierciadeł diod laserowych z wnęką Fabry-Perot”, Elektronika, vol.L, nr.5, (2009).
- P11814: : “Generacja fal terahercowych z zastosowaniem laserów półprzewodnikowych”, Elektronika, vol.L, nr.9, (2009).
- P11818: : “Optical Analyses of Si and GaAs Semiconductors by Fractional-Derivative-Spectrum Methods”, Acta Physica Polonica A, vol.116, nr.Sup, (2009).
- P11824: : “Półprzewodnikowe lasery z zewnętrzną wnęką rezonansową w zastosowaniu do generacji fal terahercowych”, (2009).
- P11832: : “The Influence of the Growth Rate and V/III Ratio on the Crystal Quality of InGaAs/GaAs QW Structures Grown by MBE and MO CVD Methods”, Journal of Crystal Growth, vol.311, (2009).
- P11875: : “Interface Influence on Structural Properties of InAs/GaSb Type-II Superlattices”, Optica Applicata, vol.39, nr.4, (2009).
- P11876: : “Photoluminescence Characterization of AlGaAs/GaAs Test Superlattices Used for Optimization of Quantum Cascade Laser Technology”, Optica Applicata, vol.39, nr.4, (2009).
- P11901: : “77 K Operation of AlGaAs/GaAs Quantum Cascade Laser at 9 mm”, Photonics Letters of Poland, vol.1, nr.1, (2009).
- P11903: : “Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology”, Acta Physica Polonica A, vol.116, nr.Sup, (2009).
- P11904: : “Supersieci II rodzaju ze związków InAs/GaInSb”, Elektronika, vol.L, nr.5, (2009).
- P11905: : “Conductance at InAs, InGaAs and GaAs MBE Epi-Layers”, Elektronika, vol.L, nr.2, (2009).
- P11906: : “Molecular Beam Epitaxy Growth for Quantum Cascade Lasers”, Acta Physica Polonica A, vol.116, nr.5, (2009).
- P11907: : “Development of (l~9.4mm) GaAs-Based Quantum Cascade Lasers”, (2009).
- P11908: : “Electrical and Optical Characterization of (l~9.4mm) GaAs-Based Quantum Cascade Lasers”, (2009).
- P11917: : “Low Dark Current InGaAs/InAlAs/InP Avalanche Photodiode”, Journal of Physics: Conference Series, vol.146, (2009).
- P11918: : “Low Resistance Ohmic Contacts to n-GaAs for Application in GaAs/AlGaAs Quantum Cascade Lasers”, Optica Applicata, vol.XXXIX, nr.4, (2009).
- P11919: : “(100) GaAs Surface Treatment Prior to Contact Metal Deposition in AlGaAs/GaAs Quantum Cascade Laser Processing”, Optica Applicata, vol.39, nr.4, (2009).
- P11921: : “The Study of Thermal Properties of GaAs/AlGaAs Quantum Cascade Lasers”, Acta Physica Polonica A, vol.116, nr.Sup, (2009).
- P11969: : “Proceedings of the 3rd National Conference on Nanotechnology NANO 2009, Warszawa, 22-26.06.2009 - Preface (Editor of the Proceedings)”, Acta Physica Polonica A, vol.116, nr.Sup, (2009).
» return
» 2008
- P11175: : “The Influence of the Growth Temperature and Interruption Time of the Crystal Quality of InGaAs/GaAs QW Structures Grown by MBE and MOCVD Methods”, Journal of Crystal Growth, vol.310, nr.11, (2008).
- P11178: : “Low Resistance p-type Ohmic Contacts for High Power InGaAs/GaAs - 980 nm cw Semiconductor Lasers”, Vacuum, vol.82, (2008).
- P11179: : “Thermal Processes in High-power Laser Bars Investigated by Spatially Resolved Thermoreflectance”, Journal of Materials Science: Materials in Electronics, vol.19, nr.1, (2008).
- P11431: : “Semiconductor Saturable Absorbes of Laser Radiation for the Wavelength of 808 nm Grown by MBE: Choice of Growth Conditions”, Vacuum, vol.82, (2008).
- P11435: : “Optically Pumped Lasing of GaN/AlGaN Structures Grown Along a Non-polar Crystallographic Direction”, Physica Status Solidi C, vol.5, nr.6, (2008).
- P11448: : “ZnO Sensing Structure for NH3 Detection”, European Physical Journal - Special Topics, vol.154, nr.1, (2008).
- P11449: : “Investigation of ZnO Sensing Structure on NH3 Action by Means of the Surface Plasmon Resonance Method”, European Physical Journal - Special Topics, vol.154, nr.1, (2008).
- P11609: : “External Cavity Wavelength Tunable Semiconductor Lasers-a Review”, Opto-Electronics Review, vol.16, nr.4, (2008).
- P11634: : “Charge Transport Diagnosis by: I-V (Resistivity), Screening and Debye Length, Mean Free Path, Mott Effect and Bohr Radius in InAs, In0.53 Ga0.47As and GaAs MBE Epitaxial Layers”, Applied Surface Science, vol.254, nr.21, (2008).
- P11642: : “Electron Microscopy of GaAs/AlGaAs Quantum Cascade Laser”, (2008).
- P11698: : “Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)”, Acta Physica Polonica A, vol.114, nr.5, (2008).
- P11713: : “Advanced InGaAs/InAlAs/InP Avalanche Photodiodes for High-speed Detection of 1.55 um Infrared Radiation”, (2008).
» return
» 2007
- P10003: : “Transparent Ohmic Contacts to GaSb/In(Al)GaAsSb Photovoltaic Cells”, Physica Status Solidi A, vol.204, nr.4, (2007).
- P10069: : “External Cavity Diode Lasers with E-beam Written Silicon Diffraction Gratings”, Optical and Quantum Electronics, vol.39, nr.7, (2007).
- P10070: : “Sulphur Passivation of GaSb, InGaAsSb and AlGaAsSb Surfaces”, Physica Status Solidi C, vol.4, nr.4, (2007).
- P10335: : “Heat-induced Wavelength Shifts in Emission Spectra of Pulse-operated Diode Lasers”, (2007).
- P10371: : “Peculiarities of Quantum Magnetotransport in In0.53Ga0.47As/In052Al048As Heterostructures Grown on (100) InP”, Electron Technology - Internet Journal, vol.39, nr.2, (2007).
- P10444: : “Thermal Management in Vertical-external-cavity Surface-emitting Lasers: an Analytical Approach”, Electron Technology - Internet Journal, vol.39, nr.3, (2007).
- P10494: : “Dynamics of Thermo-optical Properties of Semiconductor Lasers”, (2007).
- P10498: : “Two-dimensional Model of Heat Flow in Broad-area Laser Diode: Discussion of the Upper Boundary Condition”, Microelectronics Journal, vol.6-7, (2007).
- P10499: : “Two-dimensional Model of Heat Flow in Broad-area Laser Diode Mounted to the Non-ideal Heat Sink”, Journal of Physics D: Applied Physics, vol.40, nr.3, (2007).
- P10521: : “Infrared Imaging of Semiconductor Lasers”, Semiconductor Science and Technology, vol.22, (2007).
- P10522: : “Kwantowy (2DEG) czujnik pola magnetycznego z pseudomorficzną warstwą aktywną In0,52Al0,48As/In0,8Ga0,2As na podłożu (411)A InP”, Elektronika, nr.1, (2007).
- P10535: : “Facet Heating Mechanisms in High Power Semiconductor Lasers Investigated by Spatially Resolved Thermoreflectance”, (2007).
- P10536: : “Thermal Imaging of Actively Cooled High-power Laser Bars”, (2007).
- P10542: : “Tailoring of Optical Mode Profiles of High-power Diode Lasers Evidenced by Near-field Photocurrent Spectroscopy”, Applied Physics Letters, vol.91, (2007).
- P10744: : “Resonant Microcavities Enhanced Infred Photodetectors”, Optica Applicata, vol.XXXVII, nr.4, (2007).
- P10745: : “Jednomodowe przestrajalne lasery półprzewodnikowe do zastosowań w układach czujnikowych spektroskopii absorpcyjnej”, Elektronika, nr.5, (2007).
- P10755: : “Optical Characterisation of Vertical External Cavity Surface Emitting Lasers (VECSEL)”, Optica Applicata, vol.XXXVII, nr.4, (2007).
- P10766: : “Parametry galwanomagnetyczne i przewodnościowe warstw epitaksjalnych MBE z InAs/GaAs,In0,53Ga0,47As/InP i GaAs/GaAs”, Elektronika, nr.6, (2007).
- P11177: : “Investigation of Thermal Processes in High Power Laser Bars by Thermoreflectance Spectroscopy”, (2007).
- P11433: : “Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown Along the (1 120) Crystallographic Direction”, Acta Physica Polonica A, vol.112, nr.2, (2007).
- P11437: : “Piezoelektryczny napęd membran krzemowych”, Elektronika, nr.10, (2007).
- P11438: : “Krzemowe piezorezystywne czujniki wielkości mechanicznych. Teoretyczne i praktyczne aspekty modelowania i konstrukcji.”, Elektronika, nr.11, (2007).
» return
» 2006
- P10035: : “Piezoelektryczny napęd struktur MEMS”, (2006).
- P10036: : “Near-Field Spectroscopic Analysys of the Mode Structure in High-Power Diode Lasers Based on a Double Barrier Separate Confinement Heterostructure”, (2006).
- P10044: : “Pomiary dynamiki krzemowego termoanemometrycznego czujnika mikroprzepływów”, (2006).
- P10068: : “Połączenia optyczne w układach elektronicznych nowych generacji”, Elektronika, nr.6, (2006).
- P10109: : “Fotonika krzemowa - nowe perspektywy ”, Elektronika, nr.10, (2006).
- P10127: : “Extact Extraction of Piezoresistance Coefficient Using Flat Membrane”, IEEE Sensors Journal, vol.6, nr.1, (2006).
- P10238: : “Thermoreflectance Measurements of the Temperature Distributions in Laser Diodes with Non Injected Facet”, (2006).
- P10266: : “Analysis of Front Facet Temperature in Laser Diode with Non Absorbing Mirror”, (2006).
- P10271: : “PbTe-a New Medium for Quantum Ballistic Devices”, Physica E: Low-Dimensional Systems and Nanostructures, vol.34, nr.1-2, (2006).
- P10278: : “Thermoreflectance Study of Faced Heating in Semiconductor Lasers”, Materials Science in Semiconductor Processing, vol.9, nr.1-3, (2006).
- P10279: : “Complementary Thermoreflectance and Micro-raman Analysis of Facet Temperatures of Diode Lasers”, Applied Physics Letters, vol.89, nr.7, (2006).
- P10291: : “Magnetic Field Sensors Built from Slightly Crystallographicaly Mismatched Thin Films of In0,57Ga0,47As/InP Obtained by MBE and MOCVD”, Sensors and Actuators A: Physical, vol.126, nr.2, (2006).
- P10292: : “Conductivity Analysis of N-GaAs MBE Layers Using Multi-carrier Fitting”, Journal of Applied Physics, vol.99, (2006).
- P10318: : “Investigation of Oval Defects in (In)Ga(Al.)As/GaAs Heterostructures by Spatially-resolved Photoluminescence and Micro-cathodoluminescence ”, Materials Science in Semiconductor Processing, vol.9, nr.1-3, (2006).
- P10334: : “Od mikroelektroniki do mikrosystemów, czyli o roli i znaczeniu krzemu”, Zeszyty Naukowe Warszawskiej Wyższej Szkoły Informatyki, nr.1, (2006).
- P10336: : “Rewolucja w technologii LED - czy prawa Craforda i Haitza nadal obowiązują?”, Elektronika, vol.3, (2006).
- P10351: : “Microthermographic Investigations of Aging Processes in Diode Lasers”, (2006).
- P10355: : “Quantum Nanostructures of Paraelectric PbTe”, Physica E: Low-Dimensional Systems and Nanostructures, vol.35, nr.2, (2006).
- P10372: : “The Role of Photoluminescence Excitation Spectroscopy in Investigation of Quantum Cascade Lasers Properties”, Electron Technology - Internet Journal, vol.37/38, nr.10, (2006).
- P10382: : “Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection”, Acta Physica Polonica A, nr.6, (2006).
- P10474: : “Analysis of Facet Heating in Semiconductor Lasers”, (2006).
- P10493: : “Structural Characterization of InxGa1-xAs/InP Layers under Different Stresses”, Applied Surface Science, nr.253, (2006).
- P10497: : “Transient Thermal Properties of High-power Diode Laser Bars”, Applied Physics Letters, vol.89, (2006).
- P10500: : “Lasery półprzewodnikowe z zewnętrzną wnęką optyczną - konstrukcje i właściwości”, (2006).
- P10507: : “Application of Spatially Resolved Thermoreflectance for the Study of Facet Heating in High Power Semiconductor Lasers”, Optica Applicata, vol.36, nr.2-3, (2006).
- P10530: : “Application of SU8 Polymer in Waveguide Interferometer Ammonia Sensor”, Molecular and Quantum Acoustics. Annual Journal, vol.27, (2006).
- P10532: : “Application of SU8 Polymer in Waveguide Interferometer Ammonia Sensor”, Molecular and Quantum Acoustics. Annual Journal, vol.27, (2006).
- P10541: : “Nanomechanical and Nanotriobological Behaviour of Ultrathin Superlattice Films (Chapter 10)”, (2006).
» return
» 2005
- P10128: : “Krzemowe piezorezystywne czujniki wielkości mechanicznych. Teoretyczne i praktyczne aspekty modelowania i konstrukcji”, lanl.arXiv.org/cond-mat/0306671, (2005).
- P10157: : “Dielectric Coatings for Infrared Detectors”, Optica Applicata, vol.35, nr.3, (2005).
- P10164: : “Transparent P-type ZnO Films Obtained by Oxidation of Sputter-deposited Zn3N2”, Solid State Communications, vol.135, nr.1-2, (2005).
- P10165: : “Transparent P-type ZnO by Oxidation of Zn-based Compound”, AIP Conference Proceedings, vol.772, (2005).
- P10174: : “Resonant Cavity Enhanced InGaAs Photodiodes for High Speed Detection of 1.55 um Radiation”, (2005).
- P10175: : “Strain State of InAlAs/InP Layers Subjected to High Pressure Treatment”, Physica Status Solidi C, vol.2, nr.6, (2005).
- P10187: : “Some Problems of Molecular Beam Epitaxy Growth of Epitaxial Structures of Semiconductor Lasers for a 980 nm Band”, Optica Applicata, vol.35, nr.3, (2005).
- P10189: : “Deep Centers InGaAs/InP Layers Grown by MBE”, Optica Applicata, vol.35, nr.3, (2005).
- P10190: : “Thermally Induced Changes of Broad Contact Pulse Operated SQW SCH Laser Spectra”, Optica Applicata, vol.35, nr.3, (2005).
- P10239: : “Passivation of InP(100) Substrates: First Stages of Nitridation by thin InN Surface Overlayers Studied by Electron Spectroscopies”, Surface & Interface Analysis, nr.37, (2005).
- P10261: : “Lasery półprzewodnikowe wciąż pozostają przedmiotem zainteresowań nauki i przemysłu: Część II. Lasery unipolarne (kaskadowe) - nowe perspektywy optoelektroniki”, Elektronika, nr.6, (2005).
- P10262: : “Optical Interconnects - a Challenge to Semiconductor Lasers”, (2005).
- P10263: : “External Cavity Diode Lasers with Ridge-waveguide Type broad Contact Semiconductor Optical Amplifiers”, (2005).
- P10267: : “Thermoreflectance and Micro-raman Measurements of the Temperature Distributions in Broad Contact Laser Diodes”, Optica Applicata, vol.35, nr.3, (2005).
- P10268: : “Analysis of Thermal Conditions of Pulse Operated SQW SCH Lasers”, Optica Applicata, vol.35, nr.3, (2005).
- P10270: : “Disorder Suppression and Precise Conductance Quantization in Constructions of PbTe Quantum Wells”, Physical Review B, vol.72, (2005).
- P10272: : “In-plane Uniaxial Anisotropy Rotation in (Ga,Mn)As thin Films”, Physical Review B, vol.71, (2005).
- P10273: : “An Analysis of Mounting Induced Strain in Semiconductor Structures by Means of Spatially Resolved Optical Modulation Techniques”, Optica Applicata, vol.35, nr.3, (2005).
- P10277: : “Optical Study of AlGaN/GaN Based HEMT Structures”, Physica Status Solidi A, vol.202, nr.7, (2005).
- P10290: : “Magnetic Field Sensors Based on Undoped In0,57Ga0,47As/InP Heterostructures Fabricated by MBE and MOCVD”, Optica Applicata, vol.35, nr.3, (2005).
- P10319: : “Properties and Origin of Oval Defects in Epitaxial Structures Grown by Molecular Beam Epitaxy ”, Optica Applicata, vol.35, nr.3, (2005).
- P10332: : “Spatially Resolved Thermoreflectance Study of Facet Temperature in Quantum Cascade Lasers”, Physica Status Solidi A, vol.202, nr.7, (2005).
- P10333: : “Analysis of High-power Diode Laser Thermal Properties by Micro-Raman Spectroscopy”, Optica Applicata, vol.35, nr.3, (2005).
- P10348: : “Analysis of Thermal Images from Diode Lasers: Temperature Profiling and Reliability Screening.”, Applied Physics Letters, vol.86, (2005).
- P10378: : “HBV Deep Messa Ething in the InGaAs/InAlAs/AlAs Heterostructure over InP Substrate”, Materials Science-Poland, vol.23, nr.1, (2005).
- P10379: : “HBV Deep Messa Ething in the InGaAs/InAlAs/AlAs Heterostructure over InP Substrate”, (2005).
- P10380: : “Comparative Study of Sensor and Material Properties on In0,53Ga0,47As/InP Fabricated by MBE and MOCVD”, Electron Technology - Internet Journal, vol.37/38, (2005).
- P10398: : “Defect Structure of InAlAs/InP Layers”, Journal of Alloys and Compounds, vol.401, nr.1-2, (2005).
- P10407: : “The Influence of MBE Growth Conditions on InAlGaAs/AlGaAs Optical Properties”, (2005).
- P10448: : “Rewolucja w technologii LED - czy prawa Craford'a i Haitz'a nadal obowiązują?”, (2005).
- P10449: : “Lasery półprzewodnikowe wciąż pozostają przedmiotem zainteresowań nauki i przemysłu. Część I: Lasery biopolarne - technologia podąża za potrzebami rynku”, Elektronika, nr.5, (2005).
- P10452: : “Fourier Analysis of Spectral Characteristics of Edge Emitting Lasers”, (2005).
- P10457: : “Optical Study of AlGaN/GaN Based HEMT Structures”, Physica Status Solidi C, vol.2, nr.7, (2005).
- P10461: : “Delay Induced Excitability”, Physical Review Letters, vol.95, nr.4, (2005).
- P10490: : “Wpływ materiału przekładki na odporność na zarysowanie supersieci TiN/CrN”, Elektronika, nr.2-3, (2005).
- P10491: : “Nanowear of Ultrathin Tin/NbN Superlattices Deposited on Silicon”, Tribology Letters, vol.18, nr.2, (2005).
- P10556: : “High Power QW SCH InGaAs?GaAs Lasers for 980 nm Band”, Bulletin of the Polish Academy of Sciences: Technical Sciences, vol.53, nr.2, (2005).
- P10566: : “Thermally Stable Transparent Ru-Si-O Schottky Contacts for n-type GaN and AlGaN”, (2005).
- P10568: : “P-type Conducting ZnO: Fabrication and Characterization”, Physica Status Solidi C, vol.2, nr.3, (2005).
- P10579: : “Improved Performance of GaSb-Based MIR Photodetectors through Electrochemical Passivation in Sulphur Containing Solutions”, (2005).
- P10581: : “Thermoreflectance Study of Temperature Distribution on the Semiconductor Laser Mirrors”, Optica Applicata, vol.35, nr.3, (2005).
- P10598: : “Elektromechaniczna charakteryzacja piezorezystywnych czujników siły ”, (2005).
- P10604: : “MOVPE Technology of InAlGaAs/AlGaAs/GaAs Heterostructures for Optoelectronic Applications ”, (2005).
- P10609: : “Numerical Calculation of Energy Levels in InGaAs/GaAs/AlGaAs Quantum Wells ”, (2005).
- P10610: : “The Effect of Underlayer Material on Scratch Resistance of TiN/CrN Superlattices ”, (2005).
- P10612: : “Cienkowarstwowa elektroda pseudo-referencyjna do pomiaru pH ”, (2005).
» return
» 2004
- P10377: : “Mikrozawór krzemowy sterowany piezoelektrycznie”, (2004).
- P10396: : “InGaAs for Infrared. Physica and Technology”, Opto-Electronics Review, vol.12, nr.1, (2004).
- P10397: : “Recent Advances in InGaAs Detector Technology”, Physica Status Solidi A, vol.201, nr.10, (2004).
- P10406: : “The Influence of MBE Growth Conditions on InAlGaAs/AlGaAs Optical Properties”, Electron Technology - Internet Journal, vol.36, nr.4, (2004).
- P10450: : “Measurement of Linewidth Enhancement Factor in Self-assembled Quantum Dot Semiconductor Lasers Emitting at 1310 nm”, Electronics Letters, vol.40, nr.7, (2004).
- P10451: : “Półprzewodnikowe detektory promieniowania z optyczną mikrownęką rezonansową”, Elektronika, nr.5, (2004).
- P10462: : “A Method for Calculating the Conductivity Mobility Spectrum Using Multi-carrier Fitting”, Materials Science and Engineering B, vol.110, nr.1, (2004).
- P10483: : “Oval Defects in Crystals Grown by MBE Technique: Study and Methods of Their Elimination”, Electron Technology - Internet Journal, vol.36, nr.6, (2004).
- P10637: : “Ballistic Transport in PbTe-based Nanostructures”, Physica E: Low-Dimensional Systems and Nanostructures, vol.20, nr.3-4, (2004).
- P10638: : “Unidirectional Transmission of Electrons in a Magnetic Field Gradient”, Physica E: Low-Dimensional Systems and Nanostructures, vol.21, nr.2-4, (2004).
- P10649: : “Quantum Hall Ferromagnetism in II-VI Based Alloys”, Physica Status Solidi B - Basic Solid State Physics, vol.241, nr.3, (2004).
- P10650: : “Quantum Hall Ferromagnet in Magnetically-doped Quantum Wells”, Physica E: Low-Dimensional Systems and Nanostructures, vol.22, nr.1-3, (2004).
- P10653: : “Study of Long-term Stability of Ohmic Contacts to GaN”, Physica Status Solidi C, vol.1, nr.2, (2004).
- P10654: : “P-type in ZnO:N by Codoping with Cr”, (2004).
- P10690: : “Analysis of Threshold Current and Wall-plug Efficiency of Diode Lasers with Asymmetric Facet Reflectivity”, Optical and Quantum Electronics, vol.36, nr.5, (2004).
- P10694: : “Fabrication of GaSb Microlenses by Photo and E-beam Lithography and Dry Etching”, Solid State Phenomena, vol.99-100, (2004).
- P10695: : “LPE Growth and Characterisation of GaInAsSb Quaternary Layers on (100) GaSb Substrates”, Thin Solid Films, vol.459, nr.1-2, (2004).
- P10697: : “Sensitive In0.53Ga0.47As/InP(SI) Magnetic Field Sensors”, Physica Status Solidi C, vol.1, nr.2, (2004).
- P10698: : “MBE Growth and Characterization of InAs/GaAs for Infrared Detectors”, Physica Status Solidi C, vol.1, nr.2, (2004).
- P10714: : “The Influence of Different Heat Sources on Temperature Distributions in Broad-area Diode Lasers”, (2004).
- P10726: : “Investigation of Indium Tin Oxide (ITO) Films for the VCSEL Laser with Dielectric Bragg Reflectors”, Physica Status Solidi C, vol.1, nr.2, (2004).
- P10728: : “Surface Topography and Nanomechanical/Tribological Behaviour of Ultrathin Nitride Films on Silicon”, Zeitschrift fur Metallkunde, nr.5, (2004).
- P10735: : “Design Optimization of InGaAlAs/GaAs Single and Double Quantum Well Lasers Emitting at 808 nm”, (2004).
» return
» 2003
- P10725: : “Characterization of Surface of TiN/CrN and TiN/NbN Superlattices Deposited on Microelectronic Materials Using Atomic Force Microscopy”, Physics and Chemistry of Solid State (ukr), vol.4, nr.2, (2003).
- P10727: : “Nanomechanical Bhaviour of Ultrathin Nitride Films Deposited on Silicon”, (2003).
- P10771: : “Quantum Hall Ferromagnet in Magnetically-doped Quantum Wells”, Acta Physica Polonica A, vol.104, nr.2, (2003).
- P10780: : “Stress-induced Structural Changes in Thin InAs Layers Grown on GaAs Substrate”, Crystal Research and Technology, vol.38, nr.3-5, (2003).
- P10791: : “Epitaxial Lateral Overgrowth of GaSb layers by Liquid Phase Epitaxy”, Journal of Crystal Growth, vol.253, nr.1-4, (2003).
- P10792: : “Application of Tungsten Films for Substrate Masking in Liquid Phase Epitaxy Lateral Overgrowth of GaAs”, Crystal Research and Technology, vol.38, nr.3-5, (2003).
- P10797: : “Surface Topography and Adhesive properties of Ultrathin Superlattice Nitride Films Deposited on Silicon”, (2003).
- P10804: : “Modelling of Gas Sample Bahaviour in Gas Chromatography Column”, (2003).
- P10805: : “The Metod of Instability Estimation of Silicon Piezoresistive Sensor”, (2003).
- P10851: : “Influence of Solvent in Sulphur Solution on Optical Properties of GaSb Surface”, (2003).
- P10861: : “Lift-off and Anisotropic Etching Implementation in the TCD Silicon Technology”, (2003).
- P10863: : “Detekcja gazów kopalnianych z użyciem TCD”, (2003).
- P10867: : “Silicon Thermal Conductivity Detector (TCD) with the Pt Resistors”, (2003).
- P10890: : “Power Efficiency of Diode Lasers with Asymetric Mirror Losses”, (2003).
- P10891: : “Półprzewodnikowe diody elektroluminescencyjne (LED). Cz. I: HB-LED - diody o wysokiej jaskrawości”, Elektronizacja, nr.5, (2003).
- P10892: : “Półprzewodnikowe diody elektroluminescencyjne (LED). Cz. II: Rewolucja w optoelektronice - LED emitujące światło niebieskie”, Elektronizacja, nr.6, (2003).
- P10893: : “Półprzewodnikowe diody elektroluminescencyjne (LED). Cz. III: Diody LED emitujące światło białe”, Elektronizacja, nr.7-8, (2003).
- P10895: : “InGaAs Resonant-cavity Light-emitting Diodes (RC LEDs)”, (2003).
- P10903: : “Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures”, (2003).
- P10904: : “InAs Photodetectors for High Speed Detection of Infrared Radiation”, (2003).
- P10905: : “Refractive GaAs Microlenses Monolithically Integrated with InGaAs and HgCdTe Photodetectors”, (2003).
- P10909: : “Liquid Phase Epitaxy of (100) Oriented GaInAsSb with High Indium Concentration in Liquid Phase”, (2003).
- P10941: : “Theoretical Analysis of Broad-area Semiconductor Lasers with Laterally Shifted Modal Reflectors”, Optical and Quantum Electronics, vol.35, (2003).
- P10942: : “The Influence of Different Heat Sources on Temperature Distributions in Broad-area Diode Lasers”, (2003).
- P10957: : “Experimental Confirmation by Galvanomagnetic Methods of the Complex Transport Model in In0.53Ga0.47As Layers Deposited by MBE on SI-InP”, Journal of Physics and Chemistry of Solids, vol.64, (2003).
- P10958: : “Photoreflectance Study of GaN/AlGaN Structures”, Physica Status Solidi C, nr.1, (2003).
- P10959: : “Transmission Electron Microscopy of Hard Ceramic Superlattices Applied in Silicon Micro Electro Mechanical Systems”, Materials Chemistry and Physics, vol.81, nr.2-3, (2003).
- P10960: : “Characterization of Surface of TiN/CrN and TiN/NbN Superlattices Deposited on Microelectronic Materials Using Atomic Force Microscopy”, (2003).
- P10965: : “Strain Release in InGaAs/InxAl1-xAs/InP Heterostructures”, Physica B, vol.340-342, (2003).
» return
» 2002
- P10808: : “A Simple Method of Mesa Fabrication on DBR Containing Heterostructures”, Materials Science in Semiconductor Processing, vol.5, nr.6, (2002).
- P10821: : “Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells”, Physical Review Letters, vol.89, nr.26, (2002).
- P10982: : “Effects of Spin Polarization on Electron Transport in Modulation-doped Cd/1-x/Mnx/Te/Cd/1-y/Mgy/Te:I Heterostructures ”, Physica E: Low-Dimensional Systems and Nanostructures, vol.1-4, (2002).
- P10983: : “Effect of High Temperature-pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates ”, (2002).
- P10988: : “Resonant Cavity Enhanced Photonic Devices ”, Acta Physica Polonica A, vol.101, nr.1, (2002).
- P10989: : “Department of Physics and Technology of Low-dimensional Structures ”, Prace ITE, nr.8-12, (2002).
- P10990: : “High Power AlGaAs/GaAs Lasers with Improved Optical Degradation Level ”, Optica Applicata, vol.32, nr.3, (2002).
- P11011: : “ Spin Alignment of Electrons in PbTe/(PbEu)T Nanostructures ”, Physica E: Low-Dimensional Systems and Nanostructures, vol.13, nr.2-4, (2002).
- P11017: : “ Optymalizacja plazmowego procesu osadzania cienkich warstw NbN ”, (2002).
- P11019: : “ Dielektryczne zwierciadła Bragga nanoszone metodą PECVD dla celów optoelektroniki ”, (2002).
- P11021: : “ Conductance Noise and Irreversibility in Diluted Magnetic Semiconductor ”, (2002).
- P11023: : “ Transparent ZnO-Based Ohmic Contact to p-GaN ”, (2002).
- P11035: : “ Department of Semiconductor Sensors ”, Prace ITE, nr.8-12, (2002).
- P11036: : “ Mikromechaniczny krzemowy zawór gazowy ”, (2002).
- P11037: : “ Diody i matryce laserowe dużej mocy emitujące w paśmie 808nm ”, (2002).
- P11042: : “ Investigation of Insulator-semiconductor and Metal-insulator- semiconductor Structures with Spectroscopic Ellipsometry ”, (2002).
- P11043: : “ Determination of the Optical Properties of GaSb and GaN Surface ”, (2002).
- P11057: : “ Technologia platynowych rezystorów krzemowego katarometru ”, (2002).
- P11059: : “ Technologia krzemowego katorometru z platynowymi rezystorami ”, (2002).
- P11060: : “ Proces wytwarzania kontaktów typu BSC w technologii krzemowego katarometru ”, (2002).
- P11083: : “ Lasery półprzewodnikowe o przestrajalnej długości fali: perspektywy aplikacji w sieciach optycznych ”, Przegląd Telekomunikacyjny - Wiadomości Telekomunikacyjne, vol.75, nr.3, (2002).
- P11084: : “ Półprzewodnikowe lasery telekomunikacyjne: Cz. II - Lasery przestrajalne fali ”, Przegląd Telekomunikacyjny - Wiadomości Telekomunikacyjne, vol.75, nr.5, (2002).
- P11085: : “ Półprzewodnikowe lasery telekomunikacyjne: Cz. I - Lasery o stałej długości fali ”, Przegląd Telekomunikacyjny - Wiadomości Telekomunikacyjne, vol.75, nr.4, (2002).
- P11086: : “ Zagadnienie optymalizacji parametrów zwierciadeł w laserach krawędziowych ”, (2002).
- P11089: : “ Department of Semiconductor Processing for Photonics ”, Prace ITE, nr.8-12, (2002).
- P11090: : “ Elementy optoelektroniczne średniej podczerwieni ze związków półprzewodnikowych na bazie GaSb. ”, (2002).
- P11096: : “ Heterojunction In0.53Ga0.47As/InP Magnetic Field Sensors Fabricated by Molecular Beam Epitaxy ”, Optica Applicata, vol.XXXII, nr.3, (2002).
- P11102: : “ Investigations of Optical Properties of Active Regions in Vertical Cavity Surface Emitting Lasers Grown by MBE ”, Thin Solid Films, vol.412, nr.1-2, (2002).
- P11111: : “ Nano-scale Mechanical Behaviour of Superlattice Ultrathin Films Deposited on Silicon ”, (2002).
- P11117: : “ Reflectance Study of SiO2/SiN4 Dielectric Bragg Reflectors ”, Optica Applicata, vol.XXXII, nr.3, (2002).
- P11120: : “ Numerical Calculation of Electron Density Distribution in Modulation-doped GaAs/AlGaAs Heterostructures ”, Optica Applicata, vol.XXXII, nr.3, (2002).
- P11125: : “ Magnetic Properties of Electrochemically Deposited Ni/Cu Superlattices ”, Journal of the Electrochemical Society, vol.149, nr.11, (2002).
- P11131: : “ Optical Gain Saturation Effects in InAs/GaAs Self-Assembled Quantum Dots ”, Optica Applicata, vol.XXXII, nr.3, (2002).
- P11135: : “ Electrical Charge Transport of n-InAs Epitaxial Films on GaAs(001) ”, Materials Science and Engineering B, vol.90, (2002).
- P11136: : “ Magnetoresistive Mechanically Hard Superlattices of CrN NbN TiN Multilayers Deposited on Monocrystalline Si Wafers ”, (2002).
- P11137: : “ Temperature Dependence of Galvanomagnetic Properties of Undoped n-type GaAs/GaAs and n-type InGaAs/InP Layers ”, Electron Technology - Internet Journal, vol.34, nr.1, (2002).
- P11138: : “ Photoluminescence Mapping and High Resolved Photoluminescence of MBE Grown InGaAs/GaAs RC LED and VCSEL Structures ”, Thin Solid Films, vol.412, (2002).
- P11139: : “ Photoreflectance Study of AlGaN/GaN Hetero-structures Grown by MOCVD Process ”, Optica Applicata, vol.XXXII, nr.3, (2002).
- P11141: : “ Influence of Substrate on Mechanical Properties of TiN/NbN Superlattice ”, Microelectronic Engineering, vol.61-62, (2002).
- P11142: : “ Effect of Material on Nanomechanical Behaviour of TiN/NbN CrN/NbN and TiN/CrN Superlattices Deposited on Silicon ”, Zagadnienia Eksploatacji Maszyn, nr.3, (2002).
- P11143: : “ The Effect of Superlattice Ultrathin Film Construction on its Hardness ”, (2002).
- P11148: : “ Numerical Simulation of Semiconductor Lasers ”, Optica Applicata, vol.XXXII, nr.2, (2002).
- P11149: : “ Design Optimization of InGaAlAs/GaAs Quantum Well Lasers ”, (2002).
- P11157: : “ Wavelength Tuning of InGaAs/GaAs Laser Diodes by the Application of High Hydrostatic Pressure. ”, (2002).
- P11161: : “ Analysis of Electrical Conduction in an n-type GaAs Epilayer ”, Applied Physics A - Materials Science & Processing, vol.76, (2002).
- P11164: : “ Electrical Properties and Microstructure of Transparent ZnO Contacts to GaN ”, Physica Status Solidi C, nr.1, (2002).
» return
» 2001
- P11203: : “High-performance 980-nm Strained-layer InGaAs/GaAs Quantum-well Lasers”, Optica Applicata, vol.XXXI, nr.2, (2001).
- P11204: : “Strained Layer SCH SQW InGaAs/GaAs Lasers for 980 nm Band”, Opto-Electronics Review, vol.9, nr.1, (2001).
- P11205: : “ Resonant Cavity Enhanced Photonic Devices”, Optica Applicata, vol.XXXI, nr.2, (2001).
- P11216: : “Investigation of Ion Implantation for Fabrication of p-n Junctions with Modified Silicon Surface for Photovoltaic Devices”, Vacuum, vol.63, (2001).
- P11246: : “High Power Diode Lasers: Topics Relevant to Optical Pumping”, Opto-Electronics Review, vol.9, nr.1, (2001).
- P11247: : “Projektowanie i technologia laserów półprzewodnikowych dużej mocy.”, Elektronika, nr.2, (2001).
- P11249: : “Dual Contribution to the Stokes-shift in InGaN-GaN Quantum Wells”, Physica Status Solidi B - Basic Solid State Physics, vol.228, nr.1, (2001).
- P11250: : “Ellipsometric Investigations of (100) GaSb Surfaces under Chemical Etching and Sulfide Treatment”, Materials Science in Semiconductor Processing, vol.4, (2001).
- P11251: : “ Obróbka powierzchni (100) GaSb w związkach zawierających siarkę”, Elektronika, nr.8-9, (2001).
- P11254: : “Design and Fabrication of GaSb/InGaAsSb/AlGaAsSb Mid-infrared Photodetectors.”, Opto-Electronics Review, vol.9, nr.2, (2001).
- P11256: : “Wzrost epitaksjalny i właściwości warstw poczwórnych na bazie GaSb”, Elektronika, nr.8-9, (2001).
- P11257: : “Long-wavelength Strained-layer InGaAs/GaAs Quantum-well Lasers Grown by Molecular Beam Epitaxy”, Microwave and Optical Technology Letters, vol.29, nr.2, (2001).
- P11267: : “Theoretical Analysis of Lateral Modes in Broad-Area Semiconductor Lasers with Profiled Reflectivity Output Facets”, IEEE Journal of Quantum Electronics, vol.37, nr.3, (2001).
- P11271: : “Optimization of Semiconductor Dew Point Hygrometer Mirrors Surface Temperature Homogenity”, Sensors and Actuators A: Physical, vol.A92, nr.1-3, (2001).
» return
» 2000
- P11277: : “ Anomalous Behavior of the Hall Effect in III-V Heterostructures”, Acta Physica Polonica A, vol.97, nr.2, (2000).
- P11278: : “ Voltage-controlled Interference of Ballistic Electrons in an Open Quantum Dot”, Physica B, vol.280, (2000).
- P11285: : “Sulfide Treatment of GaSb Surface: Influence on the LPE Growth of GaAsSb/AlGaAsSb Heterostructures.”, Vacuum, vol.57, nr.2, (2000).
- P11286: : “ Application of CCl2F2 - and CCl4 - based Plasmas for RIE of GaSb and Related Materials.”, Vacuum, vol.56, nr.1, (2000).
- P11287: : “ Modeling and Optimization of InGaAs Photovoltaic Detectors.”, Nuclear Instruments & Methods in Physics Res. A, vol.493, nr.2-3, (2000).
- P11296: : “ Growth and Transport Properties of Relaxed Epilayers of InAs on GaAs.”, Thin Solid Films, vol.367, (2000).
- P11300: : “Thickness Dependence of the Structural and Electrical Properties of InAs Layers Epitaxially Grown by MBE on GaAs (001).”, Materials Science and Engineering B, vol.77, (2000).
- P11304: : “MBE Growth of Planar Microcavities with Distributed Bragg Reflectors.”, Thin Solid Films, vol.367, (2000).
- P11307: : “ Quantum Hall Effect in the Highly Spin-polarized Electron System”, Physica B, vol.280, nr.1-4, (2000).
- P11308: : “ Temperature and Size Scaling of the QHE Resistance: the Case of Large Spin Splitting”, Physica E: Low-Dimensional Systems and Nanostructures, vol.6, nr.1, (2000).
- P11309: : “ The Influence of Erbium on the Physical Properties of GaN Crystals Grown from N Solution in Ga at High Nitrogen Pressure”, High Pressure Research, vol.18, nr.1-6, (2000).
» return
» 1999
- P11325: : “Reciprocal Lattice Mapping of InGaAs Layers Grown on InP(001) and GaAs(001)”, Opto-Electronics Review, vol.7, nr.2, (1999).
- P11333: : “Negative Magnetoresistance and Impurity Band Conduction in an InGaAs/InP Heterostructure”, Journal of Applied Physics, vol.85, nr.9, (1999).
- P11334: : “Quantum Ballistic Transport in Constructions of n-PbTe”, Physical Review B, vol.60, nr.8, (1999).
- P11337: : “Circular Gratings Recorded as Axicon Interferograms”, Optica Applicata, vol.XXIX, nr.3, (1999).
- P11359: : “A Novel Method of Writing High Frequency Circular Gratings”, Optics and Laser Technology, vol.31, (1999).
- P11360: : “Photoreflectance Investigation of Band-gap in AlxGa1-xN Evidence of a Quasi-zero Bowing Parametr”, Applied Physics Letters, vol.74, (1999).
- P11361: : “Photoreflectance Spectroscopy as a powerful Tool the Investigation of GaN-AlGaN Quantum Well Structures”, Solid State Communications, vol.109, nr.9, (1999).
- P11362: : “The Empirical Verification of the FEM Model of Semiconductor Pressure Sensor”, Sensors and Actuators A: Physical, vol.76, nr.1-3, (1999).
- P11363: : “Optimization of InGaAs Infrared Photovoltaic Detecto”, IEE Proceedings - Optoelectronics, vol.146, nr.4, (1999).
» return
» 1998
- P11387: : “Practical Approach to Extraction of Piezoresistance Coefficient”, Sensors and Actuators A: Physical, vol.A68, nr.1-3, (1998).
- P11393: : “Probing Spin Dynamics by Conductance Fluctuations and Noise in Mesoscopic Spin-glass”, Physica B, vol.249-251, nr.1-4, (1998).
» return